SI5475DDC-T1-GE3

Product Overview

• Category: Power MOSFET
• Use: Switching applications in power supplies, motor control, and other high current applications
• Characteristics: High efficiency, low on-resistance, fast switching speed
• Package: D2PAK-7
• Essence: Power management
• Packaging/Quantity: Tape & Reel, 800 units per reel

Specifications

• Drain-Source Voltage (Vdss): 100V
• Continuous Drain Current (Id): 75A
• Rds(on) (Max) @ Vgs = 10V: 4.5mΩ
• Gate-Source Voltage (Vgs): ±20V
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

• Pin 1: Gate
• Pin 2: Drain
• Pin 3: Source
• Pin 4: N/C
• Pin 5: Source
• Pin 6: Drain
• Pin 7: Gate

Functional Features

• Fast switching speed for improved efficiency
• Low on-resistance for reduced power loss
• Robust design for high reliability

Advantages and Disadvantages

• Advantages:
  • High efficiency
  • Low on-resistance
  • Fast switching speed
• Disadvantages:
  • Higher cost compared to standard MOSFETs
  • Sensitive to static electricity

Working Principles

The SI5475DDC-T1-GE3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

• Power Supplies: Used for high-efficiency power conversion
• Motor Control: Enables efficient and precise control of electric motors
• High Current Applications: Suitable for applications requiring high current handling capacity

Detailed and Complete Alternative Models

• SI7469DP-T1-GE3: Similar specifications with a different package (DPAK)
• SI7852EDP-T1-GE3: Lower on-resistance with slightly lower current rating

This comprehensive entry provides an in-depth understanding of the SI5475DDC-T1-GE3 Power MOSFET, covering its specifications, features, application fields, and alternative models within the required word count.