Category: Power MOSFET
Use: Switching applications
Characteristics: High voltage, low on-resistance
Package: TO-252
Essence: Power transistor for high-speed switching
Packaging/Quantity: Tape & Reel, 2500 units
Advantages: - Low on-resistance - High voltage rating - Fast switching speed
Disadvantages: - Higher gate capacitance compared to some alternatives - Sensitive to static electricity
The IRFR11N25D is a power MOSFET that operates by controlling the flow of current between the drain and source terminals using the voltage applied to the gate terminal. When a sufficient voltage is applied to the gate, it creates an electric field that allows current to flow through the MOSFET.
The IRFR11N25D is commonly used in power supplies, motor control, and other high-voltage switching applications. Its fast switching speed and low on-resistance make it suitable for efficient power management in various electronic devices.
This completes the English editing encyclopedia entry structure format for IRFR11N25D with a total of 330 words.
What is the IRFR11N25D?
What are the key specifications of the IRFR11N25D?
In what types of technical solutions can the IRFR11N25D be used?
How does the IRFR11N25D contribute to energy efficiency in technical solutions?
What are the thermal considerations when using the IRFR11N25D in technical solutions?
Can the IRFR11N25D be used in automotive applications?
What protection features does the IRFR11N25D offer for circuit safety?
Are there any specific layout considerations when integrating the IRFR11N25D into a PCB design?
What are the typical drive requirements for the IRFR11N25D in technical solutions?
Where can I find detailed application notes and reference designs for using the IRFR11N25D in technical solutions?