Xem thông số kỹ thuật để biết chi tiết sản phẩm.
STB12NM50N
Introduction
STB12NM50N is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and performance.
Basic Information Overview
- Category: Semiconductor Device
- Use: Power MOSFET for electronic applications
- Characteristics: High voltage capability, low input capacitance, fast switching speed
- Package: TO-220, D2PAK, DPAK
- Essence: Efficient power management
- Packaging/Quantity: Available in reels or tubes, quantity varies based on packaging
Specifications
- Voltage Rating: 500V
- Current Rating: 12A
- On-state Resistance: 0.4Ω
- Gate Charge: 20nC
- Operating Temperature: -55°C to 150°C
- Package Type: TO-220, D2PAK, DPAK
Detailed Pin Configuration
The STB12NM50N has a standard pin configuration with the following pins: 1. Source (S) 2. Gate (G) 3. Drain (D)
Functional Features
- High voltage capability allows for use in various power applications
- Low input capacitance enables fast switching speed
- Enhanced thermal performance for improved reliability
Advantages and Disadvantages
Advantages: - High voltage capability - Low input capacitance - Fast switching speed - Enhanced thermal performance
Disadvantages: - Higher on-state resistance compared to some alternative models - Limited operating temperature range
Working Principles
The STB12NM50N operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a voltage is applied to the gate terminal, it controls the flow of current between the source and drain terminals, allowing for efficient power management.
Detailed Application Field Plans
The STB12NM50N finds extensive application in various electronic systems including: - Switching power supplies - Motor control - Lighting systems - Audio amplifiers - Renewable energy systems
Detailed and Complete Alternative Models
Some alternative models to STB12NM50N include: - STP16NF06L - IRF540N - FQP30N06L - IRL540N
In conclusion, the STB12NM50N power MOSFET offers high voltage capability, fast switching speed, and efficient power management, making it suitable for a wide range of electronic applications.
Word Count: 345
Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng STB12NM50N trong giải pháp kỹ thuật
What is the maximum drain-source voltage of STB12NM50N?
- The maximum drain-source voltage of STB12NM50N is 500V.
What is the continuous drain current rating of STB12NM50N?
- The continuous drain current rating of STB12NM50N is 12A.
What is the on-state resistance (RDS(on)) of STB12NM50N?
- The on-state resistance (RDS(on)) of STB12NM50N is typically 0.38 ohms.
What are the typical applications for STB12NM50N?
- STB12NM50N is commonly used in applications such as switch mode power supplies, motor control, and lighting ballasts.
What is the gate threshold voltage of STB12NM50N?
- The gate threshold voltage of STB12NM50N is typically 3V.
Is STB12NM50N suitable for high-frequency switching applications?
- Yes, STB12NM50N is suitable for high-frequency switching applications due to its low on-state resistance and fast switching characteristics.
Does STB12NM50N require a heat sink for operation?
- Depending on the application and operating conditions, a heat sink may be required to ensure proper thermal management for STB12NM50N.
What are the recommended operating temperature range for STB12NM50N?
- The recommended operating temperature range for STB12NM50N is -55°C to 150°C.
Can STB12NM50N be used in automotive applications?
- Yes, STB12NM50N is suitable for automotive applications such as electronic control units (ECUs) and power distribution systems.
What are the key advantages of using STB12NM50N in technical solutions?
- The key advantages of using STB12NM50N include low on-state resistance, high voltage capability, and reliable performance in various power electronics applications.