M27W401-80N6

Product Overview

Category

The M27W401-80N6 belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic systems.

Characteristics

• Non-volatile memory: The M27W401-80N6 retains stored data even when power is removed.
• High capacity: It offers a storage capacity of 4 megabits (512 kilobytes).
• Fast access time: The device provides quick access to stored data, with an access time of 80 nanoseconds.
• Low power consumption: It operates efficiently, consuming minimal power during operation.
• Durable package: The M27W401-80N6 is housed in a sturdy and compact package, ensuring protection and ease of integration into electronic systems.
• Packaging/Quantity: Typically, the M27W401-80N6 is supplied in tape-and-reel packaging, with a quantity of 250 units per reel.

Specifications

• Memory Type: Flash EEPROM
• Organization: 512K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: 32-pin TSOP (Thin Small Outline Package)
• Pin Count: 32 pins

Detailed Pin Configuration

The M27W401-80N6 features the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | A0 | Address Input | | 2 | A1 | Address Input | | 3 | A2 | Address Input | | ... | ... | ... | | 30 | VCC | Power Supply | | 31 | GND | Ground | | 32 | WE | Write Enable |

Functional Features

• Read and Write Operations: The M27W401-80N6 allows for both reading and writing of data.
• Erase Capability: It supports erasing of specific memory blocks or the entire chip.
• Sector Protection: Certain sectors can be protected from accidental modification or erasure.
• High-Speed Data Transfer: The device enables fast data transfer between the memory and the host system.

Advantages

• Non-volatile storage: Data is retained even without power, ensuring data integrity.
• High capacity: Ample storage space for various applications.
• Fast access time: Quick retrieval of data for efficient system performance.
• Low power consumption: Energy-efficient operation, prolonging battery life in portable devices.

Disadvantages

• Limited rewrite cycles: Flash memory has a finite number of erase/write cycles before degradation.
• Relatively higher cost per bit compared to other memory technologies.

Working Principles

The M27W401-80N6 utilizes flash EEPROM technology, which stores data using floating-gate transistors. These transistors trap electrical charges to represent binary information. Reading data involves sensing the charge level, while writing and erasing involve applying voltage pulses to modify the charge levels.

Detailed Application Field Plans

The M27W401-80N6 finds application in various electronic systems, including: 1. Consumer electronics: Used in digital cameras, MP3 players, and set-top boxes for data storage. 2. Automotive systems: Employed in car infotainment systems and engine control units for storing critical data. 3. Industrial equipment: Utilized in programmable logic controllers (PLCs) and automation systems for data storage and firmware updates.

Detailed and Complete Alternative Models

1. M27C4001-12F1: A similar flash EEPROM with a capacity of 4 megabits and an access time of 120 nanoseconds.
2. M29W400BB-70N6: Another flash EEPROM offering 4 megabits of storage and an access time of 70 nanoseconds.

In conclusion, the M27W401-80N6 is a high-capacity flash EEPROM memory device with fast access times and low power consumption. It finds application in various electronic systems, providing reliable data storage and retrieval capabilities.

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