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M24C04-DRDW3TP/K

M24C04-DRDW3TP/K

Product Overview

Category

M24C04-DRDW3TP/K belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This product is commonly used for non-volatile data storage in various electronic devices, such as microcontrollers, computers, and consumer electronics.

Characteristics

  • Non-volatile: The stored data remains even when power is removed.
  • Electrically erasable: Data can be erased and reprogrammed electronically.
  • High density: The M24C04-DRDW3TP/K offers a storage capacity of 4 kilobits (512 bytes).
  • Low power consumption: It operates at low voltage levels, making it energy-efficient.
  • High reliability: The EEPROM technology ensures reliable data retention and endurance.

Package

The M24C04-DRDW3TP/K is available in a small Dual Flat No-Lead (DFN) package. This package type provides compactness and ease of integration into various electronic systems.

Essence

The essence of the M24C04-DRDW3TP/K lies in its ability to store and retrieve data reliably, making it an essential component for many electronic devices.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each reel or tube containing a specific quantity of M24C04-DRDW3TP/K chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

  • Storage Capacity: 4 kilobits (512 bytes)
  • Interface: I2C (Inter-Integrated Circuit)
  • Operating Voltage: 1.7V to 5.5V
  • Operating Temperature Range: -40°C to +85°C
  • Write Time: 5 ms (maximum)
  • Data Retention: 200 years (minimum)

Detailed Pin Configuration

The M24C04-DRDW3TP/K chip has a total of 8 pins, which are assigned specific functions:

  1. VCC: Power supply voltage
  2. SDA: Serial data input/output for I2C communication
  3. SCL: Serial clock input for I2C communication
  4. WP: Write Protect pin to enable/disable write operations
  5. GND: Ground reference
  6. A0, A1: Address selection pins for device addressing
  7. NC: No Connection (reserved for future use)
  8. NC: No Connection (reserved for future use)

Functional Features

  • Random Access: Allows reading and writing of individual bytes within the memory array.
  • Byte Write: Supports byte-level write operations for flexible data storage.
  • Page Write: Enables faster write operations by allowing multiple bytes to be written in a single operation.
  • Software Write Protection: The WP pin can be used to protect the memory from accidental writes.
  • Sequential Read: Facilitates efficient retrieval of consecutive bytes without requiring repeated address transmissions.

Advantages and Disadvantages

Advantages

  • Non-volatile storage ensures data retention even during power loss.
  • Electrically erasable capability allows for easy reprogramming.
  • High reliability and endurance ensure long-term data integrity.
  • Compact package size enables integration into various electronic systems.
  • Low power consumption contributes to energy efficiency.

Disadvantages

  • Limited storage capacity compared to other memory technologies.
  • Slower write times compared to some other memory types.
  • Relatively higher cost per kilobit compared to larger capacity EEPROMs.

Working Principles

The M24C04-DRDW3TP/K utilizes EEPROM technology, which consists of floating-gate transistors that can trap or release electric charge to represent binary data. When data needs to be stored or modified, the appropriate memory cells are selectively programmed or erased using electrical signals. The stored data can be accessed by sending specific read commands to the chip.

Detailed Application Field Plans

The M24C04-DRDW3TP/K finds applications in various electronic systems, including but not limited to: - Microcontrollers and embedded systems - Computer motherboards and peripherals - Automotive electronics - Industrial control systems - Consumer electronics (e.g., smart TVs, set-top boxes)

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the M24C04-DRDW3TP/K include: - AT24C04 from Atmel - CAT24C04 from ON Semiconductor - 24AA04 from Microchip Technology - FM24C04 from Cypress Semiconductor

These alternatives may vary in terms of package type, specifications, and manufacturer-specific features, but they serve the same purpose of non-volatile data storage.

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Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng M24C04-DRDW3TP/K trong giải pháp kỹ thuật

  1. What is the maximum clock frequency for M24C04-DRDW3TP/K?
    - The maximum clock frequency for M24C04-DRDW3TP/K is 1MHz.

  2. What is the operating voltage range for M24C04-DRDW3TP/K?
    - The operating voltage range for M24C04-DRDW3TP/K is 1.7V to 5.5V.

  3. Can M24C04-DRDW3TP/K be used in automotive applications?
    - Yes, M24C04-DRDW3TP/K is suitable for automotive applications.

  4. What is the typical write cycle time for M24C04-DRDW3TP/K?
    - The typical write cycle time for M24C04-DRDW3TP/K is 5ms.

  5. Is M24C04-DRDW3TP/K compatible with I2C interface?
    - Yes, M24C04-DRDW3TP/K is compatible with I2C interface.

  6. What is the storage temperature range for M24C04-DRDW3TP/K?
    - The storage temperature range for M24C04-DRDW3TP/K is -40°C to 85°C.

  7. Can M24C04-DRDW3TP/K be used in industrial control systems?
    - Yes, M24C04-DRDW3TP/K is suitable for use in industrial control systems.

  8. What is the maximum data retention for M24C04-DRDW3TP/K?
    - The maximum data retention for M24C04-DRDW3TP/K is 200 years.

  9. Does M24C04-DRDW3TP/K support software write protection?
    - Yes, M24C04-DRDW3TP/K supports software write protection.

  10. Is M24C04-DRDW3TP/K RoHS compliant?
    - Yes, M24C04-DRDW3TP/K is RoHS compliant.