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BR24G128FVM-3AGTTR

BR24G128FVM-3AGTTR

Product Overview

Category

BR24G128FVM-3AGTTR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as microcontrollers, embedded systems, and consumer electronics.

Characteristics

  • Non-volatile: The BR24G128FVM-3AGTTR retains stored data even when power is disconnected.
  • High capacity: It offers a storage capacity of 128 kilobits (16 kilobytes).
  • Low power consumption: The device operates at low power levels, making it suitable for battery-powered applications.
  • High-speed operation: It provides fast read and write access times, enabling efficient data transfer.
  • Wide operating voltage range: The device can operate within a voltage range of 1.7V to 5.5V.
  • Compact package: BR24G128FVM-3AGTTR is available in a small surface-mount package, ensuring space-saving integration into electronic designs.

Packaging/Quantity

The BR24G128FVM-3AGTTR is typically packaged in reels or trays, containing a specified quantity of devices per package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

  • Storage Capacity: 128 kilobits (16 kilobytes)
  • Operating Voltage Range: 1.7V to 5.5V
  • Interface: I2C (Inter-Integrated Circuit)
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: Up to 10 years
  • Write Endurance: 1 million cycles

Detailed Pin Configuration

The BR24G128FVM-3AGTTR features a standard 8-pin configuration:

  1. VSS: Ground connection
  2. SDA: Serial Data Input/Output for I2C communication
  3. SCL: Serial Clock Input for I2C communication
  4. WP: Write Protect pin for write protection functionality
  5. VCC: Power supply voltage input
  6. NC: No Connection (reserved for future use)
  7. NC: No Connection (reserved for future use)
  8. VSS: Ground connection

Functional Features

  • Random Access: The device allows random access to any memory location, facilitating efficient data retrieval and modification.
  • Write Protection: The BR24G128FVM-3AGTTR includes a write protect pin that can be used to prevent accidental or unauthorized data modifications.
  • Page Write Mode: It supports page write operations, enabling simultaneous programming of multiple bytes within a single write cycle.
  • Software Reset: The device can be reset using software commands, providing flexibility in system control.

Advantages and Disadvantages

Advantages

  • Non-volatile memory ensures data retention even during power loss.
  • High storage capacity for various applications.
  • Low power consumption extends battery life.
  • Fast read and write access times enhance overall system performance.
  • Wide operating voltage range allows compatibility with different power sources.
  • Compact package enables space-efficient integration.

Disadvantages

  • Limited storage capacity compared to other non-volatile memory options.
  • Relatively higher cost per kilobit compared to larger capacity alternatives.
  • Vulnerable to physical damage or data corruption if mishandled.

Working Principles

The BR24G128FVM-3AGTTR utilizes electrically erasable programmable read-only memory (EEPROM) technology. It stores data by trapping charges within floating gate transistors, which can be electrically programmed or erased. During read operations, the stored charges are detected, allowing data retrieval. The device communicates with the host microcontroller through the I2C interface, enabling seamless integration into various systems.

Detailed Application Field Plans

The BR24G128FVM-3AGTTR finds applications in a wide range of electronic devices, including but not limited to: - Microcontrollers - Embedded systems - Consumer electronics (e.g., smart appliances, wearable devices) - Automotive electronics - Industrial control systems - Medical devices

Its high capacity, low power consumption, and compact package make it suitable for data storage requirements in these fields.

Detailed and Complete Alternative Models

  1. BR25L128F-W: Similar to BR24G128FVM-3AGTTR, this model offers 128 kilobits of storage capacity and operates on the I2C interface. However, it features a wider operating voltage range of 1.6V to 5.5V.
  2. AT24C256C: This alternative model provides a larger storage capacity of 256 kilobits (32 kilobytes) and supports both I2C and SMBus interfaces. It operates within a voltage range of 1.7V to 5.5V.
  3. FM24CL

Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng BR24G128FVM-3AGTTR trong giải pháp kỹ thuật

Sure! Here are 10 common questions and answers related to the application of BR24G128FVM-3AGTTR in technical solutions:

  1. Q: What is the BR24G128FVM-3AGTTR? A: The BR24G128FVM-3AGTTR is a specific model of EEPROM (Electrically Erasable Programmable Read-Only Memory) manufactured by ROHM Semiconductor.

  2. Q: What is the storage capacity of the BR24G128FVM-3AGTTR? A: The BR24G128FVM-3AGTTR has a storage capacity of 128 kilobits (16 kilobytes).

  3. Q: What are some typical applications for the BR24G128FVM-3AGTTR? A: The BR24G128FVM-3AGTTR is commonly used in various electronic devices, such as automotive systems, industrial equipment, consumer electronics, and IoT (Internet of Things) devices.

  4. Q: How does the BR24G128FVM-3AGTTR connect to a microcontroller or other devices? A: The BR24G128FVM-3AGTTR uses an I2C (Inter-Integrated Circuit) interface to communicate with microcontrollers or other devices.

  5. Q: Can the BR24G128FVM-3AGTTR be reprogrammed multiple times? A: Yes, the BR24G128FVM-3AGTTR is an EEPROM, which means it can be electrically erased and reprogrammed multiple times.

  6. Q: What is the operating voltage range of the BR24G128FVM-3AGTTR? A: The BR24G128FVM-3AGTTR operates within a voltage range of 1.7V to 5.5V.

  7. Q: Does the BR24G128FVM-3AGTTR have any built-in security features? A: Yes, the BR24G128FVM-3AGTTR includes a write protection function that can be used to prevent unauthorized modifications to the stored data.

  8. Q: Can the BR24G128FVM-3AGTTR operate in extreme temperature conditions? A: Yes, the BR24G128FVM-3AGTTR is designed to operate in a wide temperature range, typically from -40°C to +85°C.

  9. Q: What is the typical data retention time of the BR24G128FVM-3AGTTR? A: The BR24G128FVM-3AGTTR has a typical data retention time of 10 years.

  10. Q: Are there any specific programming requirements for the BR24G128FVM-3AGTTR? A: Yes, the BR24G128FVM-3AGTTR requires a specific programming voltage and timing sequence, which can be found in the datasheet provided by ROHM Semiconductor.

Please note that these answers are general and may vary depending on the specific application and requirements. It's always recommended to refer to the official documentation and datasheets for accurate information.