2SB1181TLQ

Product Overview

Category:

The 2SB1181TLQ belongs to the category of semiconductor devices.

Use:

It is commonly used as a power transistor in electronic circuits.

Characteristics:

• High voltage capability
• Low collector-emitter saturation voltage
• Fast switching speed

Package:

The 2SB1181TLQ is typically available in a TO-92L package.

Essence:

This product serves as a crucial component in amplifying and switching electronic signals.

Packaging/Quantity:

The 2SB1181TLQ is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

• Collector-Base Voltage: 120V
• Collector Current: 1A
• Total Power Dissipation: 0.8W
• Transition Frequency: 150MHz
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The 2SB1181TLQ features a standard three-pin configuration: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

• High voltage capability allows for use in various power applications.
• Low collector-emitter saturation voltage minimizes power loss during operation.
• Fast switching speed enables efficient signal amplification and switching.

Advantages and Disadvantages

Advantages

• High voltage capability
• Low collector-emitter saturation voltage
• Fast switching speed

Disadvantages

• Limited maximum collector current compared to some alternative models
• Relatively lower transition frequency

Working Principles

The 2SB1181TLQ operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its emitter and collector terminals through the manipulation of the base terminal.

Detailed Application Field Plans

The 2SB1181TLQ finds extensive application in the following fields: - Audio amplification circuits - Power supply units - Motor control systems - Lighting control circuits

Detailed and Complete Alternative Models

Some alternative models to the 2SB1181TLQ include: - 2N3904 - BC547 - 2SC945 - BD139

In conclusion, the 2SB1181TLQ is a versatile semiconductor device with high voltage capability, low collector-emitter saturation voltage, and fast switching speed, making it suitable for a wide range of electronic applications.

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