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HUF75345S3S

HUF75345S3S

Product Overview

Category

The HUF75345S3S belongs to the category of power MOSFETs.

Use

It is used as a high-voltage, high-speed switching device in various electronic circuits and applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Robust packaging for thermal management

Package

The HUF75345S3S is typically available in a TO-220 package.

Essence

The essence of the HUF75345S3S lies in its ability to efficiently handle high-power applications while maintaining low losses.

Packaging/Quantity

The HUF75345S3S is usually packaged individually and is available in varying quantities based on customer requirements.

Specifications

  • Drain-Source Voltage (VDS): 55V
  • Continuous Drain Current (ID): 75A
  • RDS(ON) (Max) @ VGS = 10V: 8.5mΩ
  • Gate-Source Voltage (VGS) ±20V
  • Total Power Dissipation (PD): 200W

Detailed Pin Configuration

The HUF75345S3S typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in high-power applications
  • Low on-resistance minimizes power losses
  • Fast switching speed enables efficient operation in switching circuits

Advantages

  • Suitable for high-power applications
  • Low on-resistance leads to reduced power dissipation
  • Robust packaging ensures effective thermal management

Disadvantages

  • May not be suitable for low-power or low-voltage applications
  • Larger footprint compared to smaller SMD packages

Working Principles

The HUF75345S3S operates based on the principles of field-effect transistors, utilizing the control of voltage on the gate terminal to regulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The HUF75345S3S is commonly used in the following applications: - Switching power supplies - Motor control - Inverters - DC-DC converters - Automotive systems

Detailed and Complete Alternative Models

Some alternative models to the HUF75345S3S include: - IRF1405 - FDP8870 - STP80NF55-06

In conclusion, the HUF75345S3S power MOSFET offers high-voltage capability, low on-resistance, and fast switching speed, making it suitable for various high-power electronic applications.

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Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng HUF75345S3S trong giải pháp kỹ thuật

Sure, here are 10 common questions and answers related to the application of HUF75345S3S in technical solutions:

  1. Question: What is the maximum drain-source voltage rating for HUF75345S3S?
    Answer: The maximum drain-source voltage rating for HUF75345S3S is 55 volts.

  2. Question: What is the continuous drain current rating for HUF75345S3S?
    Answer: The continuous drain current rating for HUF75345S3S is 75 amperes.

  3. Question: What is the on-resistance for HUF75345S3S?
    Answer: The on-resistance for HUF75345S3S is typically 4.5 milliohms.

  4. Question: What is the gate threshold voltage for HUF75345S3S?
    Answer: The gate threshold voltage for HUF75345S3S is typically 2.0 volts.

  5. Question: Can HUF75345S3S be used in automotive applications?
    Answer: Yes, HUF75345S3S is suitable for use in automotive applications.

  6. Question: What is the operating temperature range for HUF75345S3S?
    Answer: The operating temperature range for HUF75345S3S is -55°C to 175°C.

  7. Question: Is HUF75345S3S RoHS compliant?
    Answer: Yes, HUF75345S3S is RoHS compliant, making it suitable for use in environmentally sensitive applications.

  8. Question: What is the package type for HUF75345S3S?
    Answer: HUF75345S3S is available in a TO-220AB package.

  9. Question: Can HUF75345S3S be used in high-power switching applications?
    Answer: Yes, HUF75345S3S is designed for high-power switching applications.

  10. Question: What are some typical applications for HUF75345S3S?
    Answer: Typical applications for HUF75345S3S include motor control, power supplies, and inverters.

I hope these questions and answers are helpful! Let me know if you need further assistance.