FQD12N20TM

Introduction

The FQD12N20TM is a power MOSFET belonging to the category of electronic components. This device is commonly used in various applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Power MOSFET
• Use: Switching and amplification in electronic circuits
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: TO-252 (DPAK)
• Essence: Efficient power management
• Packaging/Quantity: Typically packaged in reels or tubes, quantity varies based on manufacturer

Specifications

• Voltage Rating: 200V
• Current Rating: 12A
• On-Resistance: 0.3 ohms
• Gate Threshold Voltage: 2V
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The FQD12N20TM typically has three pins: 1. Gate (G): Input for controlling the switching operation 2. Drain (D): Output terminal connected to the load 3. Source (S): Connected to the ground or common reference point

Functional Features

• Fast switching speed for efficient operation
• Low on-resistance leading to minimal power loss
• High voltage capability for versatile applications

Advantages and Disadvantages

Advantages

• Efficient power management
• Suitable for high voltage applications
• Fast switching speed

Disadvantages

• Sensitive to static electricity
• Requires careful handling during assembly

Working Principles

The FQD12N20TM operates based on the principles of field-effect transistors. When a suitable voltage is applied to the gate terminal, it allows current to flow between the drain and source terminals, effectively acting as a switch or amplifier in electronic circuits.

Detailed Application Field Plans

The FQD12N20TM finds extensive use in various applications including: - Switch mode power supplies - Motor control circuits - LED lighting systems - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the FQD12N20TM include: - IRF3205 - STP16NF06L - FQP30N06L - IRLB8748

In conclusion, the FQD12N20TM is a versatile power MOSFET with excellent characteristics, making it suitable for a wide range of electronic applications.

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