The FQB7N80TM_AM002 belongs to the category of power MOSFETs and is designed for use in various electronic applications. This MOSFET offers high performance characteristics, a reliable package, and essential features that make it suitable for a wide range of applications.
The FQB7N80TM_AM002 features the following specifications: - Drain-Source Voltage (VDS): 800V - Continuous Drain Current (ID): 7A - RDS(ON) Max: 1.15Ω - Gate-Source Voltage (VGS): ±30V - Power Dissipation (PD): 40W
The detailed pin configuration of the FQB7N80TM_AM002 is as follows: - Pin 1: Source - Pin 2: Drain - Pin 3: Gate
The FQB7N80TM_AM002 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently manage power in electronic circuits.
The FQB7N80TM_AM002 is well-suited for the following application fields: - Switching power supplies - Motor control - Lighting applications - Audio amplifiers
Some alternative models to the FQB7N80TMAM002 include: - FQD7N80TMAM002 - FQP7N80TMAM002 - FQPF7N80TMAM002
In conclusion, the FQB7N80TM_AM002 power MOSFET offers high performance and reliability, making it an ideal choice for various electronic applications.
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What is the maximum drain-source voltage of FQB7N80TM_AM002?
What is the continuous drain current rating of FQB7N80TM_AM002?
What is the on-resistance of FQB7N80TM_AM002?
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What are the typical applications of FQB7N80TM_AM002?
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Does FQB7N80TM_AM002 require a heat sink for operation?
Is FQB7N80TM_AM002 suitable for high-frequency switching applications?
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Can FQB7N80TM_AM002 be used in automotive applications?