Xem thông số kỹ thuật để biết chi tiết sản phẩm.
FQB5N80TM
Product Overview
Category
The FQB5N80TM belongs to the category of power MOSFETs.
Use
It is used as a switching device in various electronic circuits and power supplies.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The FQB5N80TM is typically available in TO-263 packaging.
Essence
This MOSFET is essential for efficient power management and control in electronic devices.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 800V
- Continuous Drain Current (ID): 5A
- On-Resistance (RDS(on)): 1.6Ω
- Gate-Source Voltage (VGS): ±30V
- Total Gate Charge (Qg): 12nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The FQB5N80TM typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various applications
- Low on-resistance minimizes power loss
- Fast switching speed enables efficient operation in switching circuits
- Low gate charge facilitates faster switching transitions
Advantages
- Suitable for high voltage applications
- Low conduction losses due to low on-resistance
- Efficient switching performance
- Reduced drive requirements due to low gate charge
Disadvantages
- May require careful handling due to high voltage capability
- Sensitivity to static discharge
Working Principles
The FQB5N80TM operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The FQB5N80TM is widely used in: - Switching power supplies - Electronic ballasts - Motor control circuits - Inverters - LED lighting applications
Detailed and Complete Alternative Models
Some alternative models to FQB5N80TM include: - IRF840 - STP5NK80ZFP - FDPF5N50NZ
In conclusion, the FQB5N80TM power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power management applications.
[Word count: 346]
Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng FQB5N80TM trong giải pháp kỹ thuật
What is the maximum drain-source voltage rating of FQB5N80TM?
- The maximum drain-source voltage rating of FQB5N80TM is 800V.
What is the continuous drain current rating of FQB5N80TM?
- The continuous drain current rating of FQB5N80TM is 5A.
What is the on-state resistance (RDS(on)) of FQB5N80TM?
- The on-state resistance (RDS(on)) of FQB5N80TM is typically 1.6 ohms.
What are the typical applications for FQB5N80TM?
- FQB5N80TM is commonly used in power supplies, lighting ballasts, and motor control applications.
What is the gate threshold voltage of FQB5N80TM?
- The gate threshold voltage of FQB5N80TM is typically 3V.
Is FQB5N80TM suitable for high-frequency switching applications?
- Yes, FQB5N80TM is suitable for high-frequency switching due to its fast switching characteristics.
Does FQB5N80TM have built-in protection features?
- FQB5N80TM does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
What is the operating temperature range of FQB5N80TM?
- The operating temperature range of FQB5N80TM is typically -55°C to 150°C.
Can FQB5N80TM be used in automotive applications?
- FQB5N80TM is not specifically designed for automotive applications and may not meet automotive-grade requirements.
What are the key advantages of using FQB5N80TM in technical solutions?
- The key advantages of using FQB5N80TM include its high voltage rating, low on-state resistance, and suitability for various power control applications.