FDV302P

Product Overview

The FDV302P belongs to the category of field-effect transistors (FETs) and is commonly used in electronic circuits for amplification, switching, and voltage regulation. This FET is characterized by its low on-resistance, high input impedance, and fast switching speed. The package includes a single FDV302P transistor, and it is available in various packaging options such as SOT-23.

Specifications

• Drain-Source Voltage (VDS): 20V
• Continuous Drain Current (ID): 0.5A
• Total Power Dissipation: 250mW
• Gate-Source Voltage (VGS): ±8V
• On-Resistance (RDS(on)): 1.5Ω (max)

Detailed Pin Configuration

The FDV302P features a standard SOT-23 pin configuration with three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• Low On-Resistance: Enables efficient current flow and minimal power dissipation.
• High Input Impedance: Allows for easy interfacing with control circuits.
• Fast Switching Speed: Facilitates rapid switching between on and off states.

Advantages and Disadvantages

Advantages

• Low power dissipation
• Compact size
• High input impedance

Disadvantages

• Limited maximum drain-source voltage
• Relatively low continuous drain current rating

Working Principles

The FDV302P operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the conductivity between the source and drain terminals. When a sufficient gate-source voltage is applied, the FET allows current to flow from the drain to the source, effectively acting as a switch or amplifier.

Detailed Application Field Plans

The FDV302P finds extensive application in low-power electronic circuits, including: - Signal amplification in audio applications - Switching in digital logic circuits - Voltage regulation in power management circuits

Detailed and Complete Alternative Models

• FDV301P: Similar specifications with a lower on-resistance
• FDV303P: Higher drain-source voltage rating with comparable characteristics
• FDV304P: Enhanced continuous drain current capacity for higher power applications

In conclusion, the FDV302P FET offers a compact and efficient solution for various electronic circuit applications, particularly those requiring low power dissipation and high input impedance.

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