2SC4135T-E

Product Category: Transistor

Basic Information Overview: - Category: Bipolar Junction Transistor (BJT) - Use: Amplification and switching in electronic circuits - Characteristics: High current and voltage capability, low noise, high frequency response - Package: TO-220AB - Essence: Power transistor for general-purpose applications - Packaging/Quantity: Typically sold in reels or tubes of 50 to 100 units

Specifications: - Maximum Collector-Base Voltage (Vcb): 150V - Maximum Collector Current (Ic): 10A - Power Dissipation (Pd): 30W - Transition Frequency (ft): 30MHz - Gain-Bandwidth Product (fT): 30MHz

Detailed Pin Configuration: - Collector (C): Connected to the positive supply voltage - Base (B): Input terminal for controlling the transistor's operation - Emitter (E): Output terminal for the amplified signal

Functional Features: - High power amplification capability - Fast switching speed - Low noise performance

Advantages and Disadvantages: - Advantages: - High current and voltage handling - Suitable for high-frequency applications - Low noise characteristics - Disadvantages: - Relatively large package size - Limited maximum frequency compared to other transistor types

Working Principles: The 2SC4135T-E operates based on the principles of bipolar junction transistors, where the flow of current between the collector and emitter is controlled by the base current. It amplifies or switches electronic signals based on the input at the base terminal.

Detailed Application Field Plans: - Audio amplifiers - Switching power supplies - RF amplifiers - Motor control circuits

Detailed and Complete Alternative Models: - 2N3055 - MJL3281A - TIP31C - BD139

This comprehensive entry provides a detailed understanding of the 2SC4135T-E transistor, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.