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2SB1302S-TD-E
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2SB1302S-TD-E

Product Category: Transistor

Basic Information Overview: - Category: Bipolar Junction Transistor (BJT) - Use: Amplification and switching in electronic circuits - Characteristics: High current and voltage capability, low power consumption - Package: TO-3P - Essence: Power transistor for high-speed switching applications - Packaging/Quantity: Bulk packaging, quantity varies by supplier

Specifications: - Collector-Base Voltage (VCBO): 230V - Collector-Emitter Voltage (VCEO): 230V - Emitter-Base Voltage (VEBO): 5V - Collector Current (IC): 15A - Power Dissipation (PD): 80W - Transition Frequency (fT): 30MHz

Detailed Pin Configuration: - Pin 1 (Emitter) - Pin 2 (Base) - Pin 3 (Collector)

Functional Features: - High current gain - Low saturation voltage - Fast switching speed

Advantages: - Suitable for high-power applications - Reliable and durable - Low distortion in amplification

Disadvantages: - Higher heat dissipation - Larger physical size compared to smaller transistors

Working Principles: The 2SB1302S-TD-E operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its terminals to amplify or switch electronic signals.

Detailed Application Field Plans: - Audio amplifiers - Power supplies - Motor control circuits - RF amplifiers

Detailed and Complete Alternative Models: - 2SD1887 - MJL3281A - MJE15032

This comprehensive entry provides a detailed overview of the 2SB1302S-TD-E transistor, covering its category, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.

Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng 2SB1302S-TD-E trong giải pháp kỹ thuật

  1. What is the maximum collector current of 2SB1302S-TD-E?

    • The maximum collector current of 2SB1302S-TD-E is 15A.

  2. What is the maximum collector-emitter voltage of 2SB1302S-TD-E?

    • The maximum collector-emitter voltage of 2SB1302S-TD-E is 230V.

  3. What is the power dissipation of 2SB1302S-TD-E?

    • The power dissipation of 2SB1302S-TD-E is 80W.

  4. What are the typical applications for 2SB1302S-TD-E?

    • Typical applications include audio amplifiers, power management systems, and general electronic circuits.

  5. What is the gain (hFE) of 2SB1302S-TD-E?

    • The gain (hFE) of 2SB1302S-TD-E typically ranges from 60 to 320.

  6. Is 2SB1302S-TD-E suitable for high-power applications?

    • Yes, 2SB1302S-TD-E is suitable for high-power applications due to its high collector current and power dissipation capabilities.

  7. Does 2SB1302S-TD-E require a heat sink for operation?

    • Yes, it is recommended to use a heat sink when operating 2SB1302S-TD-E at high currents or power levels to ensure proper thermal management.

  8. What are the thermal characteristics of 2SB1302S-TD-E?

    • The thermal resistance junction to case (RthJC) is 1.25°C/W, and the thermal resistance junction to ambient (RthJA) is 62.5°C/W.

  9. Can 2SB1302S-TD-E be used in push-pull amplifier configurations?

    • Yes, 2SB1302S-TD-E can be used in push-pull amplifier configurations due to its high current and voltage ratings.

  10. Are there any specific precautions to consider when using 2SB1302S-TD-E in technical solutions?

    • It is important to ensure proper heatsinking, avoid exceeding the maximum ratings, and follow the manufacturer's datasheet recommendations for optimal performance and reliability.