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2SB1121T-TD-E
Product Category: Transistor
Basic Information Overview: - Category: Bipolar Junction Transistor (BJT) - Use: Amplification and switching in electronic circuits - Characteristics: High current and voltage capability, low noise, high frequency response - Package: TO-252-3 (DPAK) - Essence: NPN silicon epitaxial planar transistor - Packaging/Quantity: Typically available in reels of 3000 units
Specifications: - Collector-Base Voltage (VCBO): 60V - Collector-Emitter Voltage (VCEO): 50V - Emitter-Base Voltage (VEBO): 6V - Collector Current (IC): 3A - Power Dissipation (PD): 2W - Transition Frequency (fT): 150MHz - Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration: - Pin 1 (Emitter): Connected to the emitter region of the transistor - Pin 2 (Base): Connected to the base region of the transistor - Pin 3 (Collector): Connected to the collector region of the transistor
Functional Features: - High current gain - Low saturation voltage - Fast switching speed
Advantages and Disadvantages: - Advantages: - High current and voltage capability - Low noise - High frequency response - Disadvantages: - Sensitive to temperature variations - Limited power dissipation capability
Working Principles: The 2SB1121T-TD-E operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its three terminals to amplify or switch electronic signals.
Detailed Application Field Plans: - Audio amplifiers - Switching circuits - Power supply control
Detailed and Complete Alternative Models: - 2SB1121 - 2N3904 - BC547
This comprehensive entry provides a detailed understanding of the 2SB1121T-TD-E transistor, covering its specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
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What is the maximum collector current of 2SB1121T-TD-E?
- The maximum collector current of 2SB1121T-TD-E is 3A.
What is the maximum collector-emitter voltage of 2SB1121T-TD-E?
- The maximum collector-emitter voltage of 2SB1121T-TD-E is 50V.
What is the power dissipation of 2SB1121T-TD-E?
- The power dissipation of 2SB1121T-TD-E is 1W.
What are the typical applications of 2SB1121T-TD-E?
- Typical applications of 2SB1121T-TD-E include general-purpose switching and amplification in electronic circuits.
What is the thermal resistance of 2SB1121T-TD-E?
- The thermal resistance of 2SB1121T-TD-E is approximately 83°C/W.
Is 2SB1121T-TD-E suitable for use in audio amplifier circuits?
- Yes, 2SB1121T-TD-E can be used in audio amplifier circuits due to its general-purpose amplification capabilities.
What are the recommended operating conditions for 2SB1121T-TD-E?
- The recommended operating conditions for 2SB1121T-TD-E include a collector current of 1A and a collector-emitter voltage of 20V.
Does 2SB1121T-TD-E require a heat sink for proper operation?
- It is recommended to use a heat sink with 2SB1121T-TD-E to ensure proper heat dissipation, especially when operating at higher currents.
Can 2SB1121T-TD-E be used in high-frequency applications?
- While 2SB1121T-TD-E is not specifically designed for high-frequency applications, it can still be used within its specified frequency range.
What are the key differences between 2SB1121T-TD-E and similar transistors in its class?
- The key differences may include variations in maximum ratings, gain characteristics, and thermal properties, which should be carefully considered when selecting a transistor for a specific technical solution.