PBSS8110Y,115

Product Category: Transistor

Basic Information Overview: - Category: NPN Bipolar Transistor - Use: Amplification and Switching - Characteristics: High current capability, low voltage drop, fast switching speed - Package: SOT457 (SC-74) - Essence: Small signal transistor for general purpose applications - Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications: - Collector-Base Voltage (VCBO): 50V - Collector-Emitter Voltage (VCEO): 45V - Emitter-Base Voltage (VEBO): 5V - Continuous Collector Current (IC): 1A - Power Dissipation (Ptot): 625mW - Transition Frequency (ft): 250MHz - Operating Temperature Range (Tj): -65°C to 150°C

Detailed Pin Configuration: The PBSS8110Y,115 has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features: - High current gain - Low saturation voltage - Fast switching speed - Low equivalent series resistance

Advantages: - Suitable for high-speed switching applications - Small package size for space-constrained designs - Low power dissipation

Disadvantages: - Limited maximum collector current compared to some alternative models - Relatively low breakdown voltage

Working Principles: The PBSS8110Y,115 operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its terminals to amplify or switch electronic signals.

Detailed Application Field Plans: - Audio amplification circuits - LED driver circuits - Switching power supplies - Motor control applications

Detailed and Complete Alternative Models: 1. BC847B,215 2. MMBT3904,215 3. 2N7002DW,125

This comprehensive entry provides a detailed overview of the PBSS8110Y,115, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.