NAND02GR3B2DN6E

Product Overview

• Category: NAND Flash Memory
• Use: Data storage in electronic devices
• Characteristics:
  • High-density non-volatile memory
  • Fast read and write speeds
  • Low power consumption
  • Compact package size
• Package: BGA (Ball Grid Array)
• Essence: NAND02GR3B2DN6E is a high-performance NAND flash memory chip designed for data storage applications in various electronic devices.
• Packaging/Quantity: Sold in reels, typically containing multiple chips.

Specifications

• Capacity: 2GB
• Interface: Serial Peripheral Interface (SPI)
• Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 50Mbps (Max)
• Endurance: Up to 100,000 program/erase cycles
• Retention: Up to 10 years

Detailed Pin Configuration

The NAND02GR3B2DN6E chip has the following pin configuration:

1. VCC - Power supply voltage
2. GND - Ground
3. CS - Chip select
4. SCK - Serial clock input
5. SI - Serial data input
6. SO - Serial data output
7. WP - Write protect
8. HOLD - Hold input

Functional Features

• High-density storage: The NAND02GR3B2DN6E offers a large capacity of 2GB, allowing for ample data storage.
• Fast data transfer: With a maximum data transfer rate of 50Mbps, it enables quick read and write operations.
• Low power consumption: The chip is designed to minimize power usage, making it suitable for battery-powered devices.
• Compact package size: The BGA package ensures a small footprint, making it ideal for space-constrained applications.

Advantages and Disadvantages

Advantages: - High storage capacity - Fast data transfer rate - Low power consumption - Compact package size

Disadvantages: - Limited endurance (100,000 program/erase cycles) - Relatively higher cost compared to other memory technologies

Working Principles

The NAND02GR3B2DN6E utilizes NAND flash memory technology, which stores data in a series of memory cells. These cells are organized into pages, blocks, and planes. Data can be written to and read from these cells by applying appropriate voltage levels.

During programming, electrons are trapped in the floating gate of each memory cell, representing a logical "1." Erasing the memory involves removing these trapped electrons, resetting the cell to a logical "0." This process allows for non-volatile data storage.

Detailed Application Field Plans

The NAND02GR3B2DN6E chip finds application in various electronic devices, including but not limited to: - Smartphones and tablets - Solid-state drives (SSDs) - Digital cameras - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

• NAND04GR3B2DN6E: 4GB capacity variant of the same NAND flash memory chip.
• NAND08GR3B2DN6E: 8GB capacity variant of the same NAND flash memory chip.
• NAND16GR3B2DN6E: 16GB capacity variant of the same NAND flash memory chip.
• NAND32GR3B2DN6E: 32GB capacity variant of the same NAND flash memory chip.

These alternative models offer increased storage capacities while maintaining similar characteristics and functionality.

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