MT53D512M32D2DS-053 AIT:D TR

Product Overview

Category

The MT53D512M32D2DS-053 AIT:D TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size

Package

The MT53D512M32D2DS-053 AIT:D TR comes in a small form factor package, making it suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

The MT53D512M32D2DS-053 AIT:D TR is typically packaged in trays or reels, with each package containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 512 megabytes (MB)
• Organization: 32M words x 16 bits
• Operating Voltage: 1.2 volts (V)
• Clock Frequency: Up to 1600 megahertz (MHz)
• Data Transfer Rate: Up to 3200 megabits per second (Mbps)
• Refresh Mode: Auto-refresh and self-refresh modes supported
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT53D512M32D2DS-053 AIT:D TR has a total of 96 pins. The pin configuration is as follows:

• Pins 1-48: Address Inputs (A0-A23)
• Pins 49-64: Data Inputs/Outputs (DQ0-DQ15)
• Pins 65-72: Control Inputs (RAS, CAS, WE, CS)
• Pins 73-80: Power Supply and Ground (VDD, VSS)
• Pins 81-96: Clock and Miscellaneous (CLK, CKE, DQS, DM)

Functional Features

• High-speed data access: The MT53D512M32D2DS-053 AIT:D TR offers fast read and write operations, enabling efficient data processing.
• Large storage capacity: With a capacity of 512MB, this memory device can store a significant amount of data.
• Low power consumption: The product is designed to minimize power consumption, making it suitable for battery-powered devices.
• Error correction: Built-in error correction mechanisms ensure data integrity and reliability.

Advantages and Disadvantages

Advantages

• Fast data access speeds
• Large storage capacity
• Low power consumption
• Error correction capabilities

Disadvantages

• Relatively higher cost compared to other memory technologies
• Susceptible to data loss in case of power failure without proper backup mechanisms

Working Principles

The MT53D512M32D2DS-053 AIT:D TR operates based on the principles of dynamic random access memory (DRAM). It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain the stored information. When a read or write operation is initiated, the appropriate address is provided, and the data is accessed or written accordingly.

Detailed Application Field Plans

The MT53D512M32D2DS-053 AIT:D TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles

Its high-speed data access, large storage capacity, and low power consumption make it suitable for these devices, where efficient data processing and storage are crucial.

Detailed and Complete Alternative Models

• MT53D256M16D2DS-053 AIT:D TR
• MT53D1024M8D2DS-053 AIT:D TR
• MT53D2048M4D2DS-053 AIT:D TR
• MT53D4096M2D2DS-053 AIT:D TR

These alternative models offer different capacities and organizations while sharing similar characteristics and specifications to the MT53D512M32D2DS-053 AIT:D TR. They provide flexibility in choosing the appropriate memory device based on specific requirements.

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