MT53D1024M32D4DT-046 AAT:E

Product Overview

Category

The MT53D1024M32D4DT-046 AAT:E belongs to the category of memory products.

Use

This product is primarily used for storing and retrieving data in electronic devices.

Characteristics

• High storage capacity
• Fast data access speed
• Low power consumption
• Reliable performance

Package

The MT53D1024M32D4DT-046 AAT:E is packaged in a compact and durable form factor, suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to provide efficient and reliable data storage capabilities for electronic devices.

Packaging/Quantity

The MT53D1024M32D4DT-046 AAT:E is typically packaged in trays or reels, with a specific quantity per package depending on the manufacturer's specifications.

Specifications

• Model: MT53D1024M32D4DT-046 AAT:E
• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 1,024 megabits (128 megabytes)
• Organization: 32M words x 32 bits
• Operating Voltage: 1.2V
• Speed: DDR4-3200
• Interface: Double Data Rate (DDR)
• Package Type: Ball Grid Array (BGA)
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT53D1024M32D4DT-046 AAT:E has a specific pin configuration as follows:

• VDD: Power supply voltage
• VSS: Ground
• DQ[31:0]: Data input/output lines
• BA[1:0]: Bank address
• RAS#, CAS#: Row and column address strobes
• WE#: Write enable
• CK, CK#: Clock inputs
• CS#: Chip select
• DM[3:0]: Data mask

Functional Features

• High-speed data transfer
• Low power consumption
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Error correction code (ECC) support for data integrity

Advantages

• Large storage capacity allows for extensive data storage
• Fast data access speed enhances overall system performance
• Low power consumption contributes to energy efficiency
• Reliable performance ensures data integrity and system stability

Disadvantages

• Relatively higher cost compared to other memory options
• Limited compatibility with older devices due to DDR4 interface

Working Principles

The MT53D1024M32D4DT-046 AAT:E operates based on the principles of dynamic random access memory. It stores data in a matrix of capacitors, where each capacitor represents a single bit of information. The stored data is periodically refreshed to maintain its integrity.

Detailed Application Field Plans

The MT53D1024M32D4DT-046 AAT:E finds applications in various electronic devices, including but not limited to:

1. Personal computers
2. Laptops and notebooks
3. Servers and data centers
4. Gaming consoles
5. Mobile devices (smartphones, tablets)

Detailed and Complete Alternative Models

1. MT53B512M32D2NP-046 AAT:E
2. MT53E256M32D2NP-046 AAT:E
3. MT53F128M32D2NP-046 AAT:E
4. MT53G64M32D2NP-046 AAT:E
5. MT53H32M32D2NP-046 AAT:E

These alternative models offer similar functionality and specifications, providing options for different memory requirements and system configurations.

In conclusion, the MT53D1024M32D4DT-046 AAT:E is a high-performance memory product that offers large storage capacity, fast data access speed, and low power consumption. It finds applications in various electronic devices and is available in alternative models to cater to different system requirements.