MT51K256M32HF-60 N:B TR

Product Overview

Category

MT51K256M32HF-60 N:B TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size

Package

MT51K256M32HF-60 N:B TR is available in a small form factor package, which ensures easy integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data quickly and efficiently.

Packaging/Quantity

MT51K256M32HF-60 N:B TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Model: MT51K256M32HF-60 N:B TR
• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 256 Megabits (32 Megabytes)
• Speed: 60 nanoseconds
• Operating Voltage: 3.3 Volts
• Interface: Parallel

Detailed Pin Configuration

The pin configuration of MT51K256M32HF-60 N:B TR is as follows:

1. VDD - Power supply voltage
2. VSS - Ground
3. A0-A11 - Address inputs
4. BA0-BA1 - Bank address inputs
5. DQ0-DQ31 - Data input/output lines
6. RAS - Row address strobe
7. CAS - Column address strobe
8. WE - Write enable
9. CKE - Clock enable
10. CLK - Clock input

(Note: This is a simplified representation. The actual pin configuration may include additional pins for specific functionalities.)

Functional Features

• High-speed data access: MT51K256M32HF-60 N:B TR offers fast read and write operations, enabling quick data retrieval and storage.
• Low power consumption: This product is designed to minimize power consumption, making it suitable for battery-powered devices.
• Error correction: It incorporates error correction techniques to ensure data integrity and reliability.
• Refresh mechanism: MT51K256M32HF-60 N:B TR includes an automatic refresh mechanism to maintain data integrity over time.

Advantages and Disadvantages

Advantages

• Fast data access speed
• Large storage capacity
• Low power consumption
• Reliable data integrity through error correction
• Automatic refresh mechanism

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance (number of read/write cycles)

Working Principles

MT51K256M32HF-60 N:B TR operates based on the principles of dynamic random access memory (DRAM). It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain the stored information. When data needs to be accessed, the appropriate row and column addresses are provided, and the data is read or written accordingly.

Detailed Application Field Plans

MT51K256M32HF-60 N:B TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles

Its high-speed data access, large storage capacity, and low power consumption make it suitable for these devices, where efficient data storage and retrieval are crucial.

Detailed and Complete Alternative Models

Some alternative models to MT51K256M32HF-60 N:B TR that offer similar functionality and specifications include: - MT51K512M32HF-60 N:B TR - MT51K256M16HA-60 N:B TR - MT51K128M8HA-60 N:B TR

These models provide different capacities and configurations to cater to various application requirements.

(Note: This is not an exhaustive list, and there may be other alternative models available in the market.)

In conclusion, MT51K256M32HF-60 N:B TR is a semiconductor memory device that offers high-speed data access, large storage capacity, and low power consumption. It finds applications in a wide range of electronic devices and provides reliable data storage and retrieval capabilities.