MT47H16M16BG-37V:B

Product Overview

Category

MT47H16M16BG-37V:B belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in computer systems, servers, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

• High-speed operation: The MT47H16M16BG-37V:B offers fast data transfer rates, making it suitable for applications that demand quick access to large amounts of data.
• Large capacity: With a storage capacity of 16 gigabits (2 gigabytes), this DRAM chip can accommodate substantial amounts of data.
• Low power consumption: The MT47H16M16BG-37V:B is designed to operate efficiently, consuming minimal power during its operation.
• Wide temperature range: This chip can function reliably across a broad temperature range, making it suitable for various environments.
• RoHS compliant: The product adheres to the Restriction of Hazardous Substances directive, ensuring its environmental friendliness.

Package and Quantity

The MT47H16M16BG-37V:B is available in a compact BGA (Ball Grid Array) package. Each package contains one DRAM chip.

Specifications

• Organization: 16 Meg x 16 bits
• Voltage: 3.7V
• Speed: 37 nanoseconds (ns)
• Refresh: Auto-refresh and self-refresh modes supported
• Operating Temperature Range: -40°C to +85°C
• Package Type: 96-ball FBGA

Pin Configuration

The MT47H16M16BG-37V:B follows a standard pin configuration for BGA packages. The detailed pinout diagram can be found in the product datasheet.

Functional Features

• High-speed data transfer: The MT47H16M16BG-37V:B enables rapid data read and write operations, facilitating efficient data processing.
• Reliable performance: This DRAM chip offers stable and consistent performance, ensuring the integrity of stored data.
• Low power consumption: With its low power requirements, the MT47H16M16BG-37V:B helps conserve energy in electronic devices.
• Easy integration: The chip is designed for seamless integration into various electronic systems, simplifying the overall design process.

Advantages and Disadvantages

Advantages

• High-speed operation allows for quick data access.
• Large storage capacity accommodates substantial amounts of data.
• Low power consumption contributes to energy efficiency.
• Wide temperature range ensures reliable performance in different environments.
• RoHS compliance promotes environmental friendliness.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Sensitive to electrical noise and voltage fluctuations.
• Requires periodic refresh cycles to maintain data integrity.

Working Principles

The MT47H16M16BG-37V:B operates based on the principles of dynamic random access memory. It stores data as charge in tiny capacitors within the chip. To retain the data, the capacitors need to be periodically refreshed. When the system requires access to specific data, the chip retrieves it by reading the charges from the capacitors.

Application Field Plans

The MT47H16M16BG-37V:B finds applications in a wide range of electronic devices, including: - Personal computers - Laptops and notebooks - Servers and data centers - Networking equipment - Gaming consoles - Automotive electronics - Industrial control systems

Alternative Models

For users seeking alternative options, the following DRAM chips can be considered: - MT47H32M16HR-25E:A - MT47H64M16HR-3IT:A - MT47H128M16HG-3IT:A - MT47H256M16HR-25E:A

These models offer varying capacities, speeds, and features to cater to different application requirements.

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