MT29F8G08ABABAWP:B

Product Overview

Category

MT29F8G08ABABAWP:B belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Non-volatile memory
• Fast read and write speeds
• Compact size
• Low power consumption

Package

MT29F8G08ABABAWP:B is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store large amounts of data reliably and efficiently.

Packaging/Quantity

MT29F8G08ABABAWP:B is typically packaged in trays or reels, with each package containing a specific quantity of chips.

Specifications

• Storage Capacity: 8 GB
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 Mbps
• Erase/Program Cycles: Up to 10,000 cycles

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip Enable
4. RE: Read Enable
5. WE: Write Enable
6. A0-A18: Address Inputs
7. DQ0-DQ7: Data Input/Output
8. R/B: Ready/Busy Status
9. CLE: Command Latch Enable
10. ALE: Address Latch Enable
11. WP: Write Protect
12. RP: Reset/Power Down

Functional Features

• Page Program Operation
• Block Erase Operation
• Random Data Read Operation
• Cache Program and Read Operations
• Multiplane Operation for Enhanced Performance

Advantages

• High storage capacity allows for ample data storage.
• Fast read and write speeds enable quick data access.
• Non-volatile memory ensures data retention even during power loss.
• Compact size facilitates integration into various electronic devices.
• Low power consumption prolongs battery life.

Disadvantages

• Limited erase/program cycles may affect the lifespan of the memory.
• Higher cost compared to other types of memory.
• Susceptible to physical damage if mishandled.

Working Principles

MT29F8G08ABABAWP:B utilizes NAND flash technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the voltage levels applied to it. The data is accessed by sending specific commands and addresses to the memory chip.

Detailed Application Field Plans

MT29F8G08ABABAWP:B finds applications in a wide range of electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F8G08ABACAWP:B
2. MT29F8G08ABADAWP:B
3. MT29F8G08ABAEAWP:B
4. MT29F8G08ABAFAWP:B

These alternative models offer similar specifications and functionality, providing options for different design requirements.

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