MT29F64G08CBCDBJ4-6R:D TR

Product Overview

Category

MT29F64G08CBCDBJ4-6R:D TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F64G08CBCDBJ4-6R:D TR offers a storage capacity of 64 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: It provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F64G08CBCDBJ4-6R:D TR comes in a compact form factor, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT29F64G08CBCDBJ4-6R:D TR is typically packaged in a small surface-mount package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 64 GB
• Interface: NAND Flash
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: Surface Mount
• Data Transfer Rate: Up to 400 megabits per second (Mbps)

Detailed Pin Configuration

The MT29F64G08CBCDBJ4-6R:D TR has a standard pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip Enable
4. RE: Read Enable
5. WE: Write Enable
6. A0-A18: Address Inputs
7. DQ0-DQ15: Data Input/Output
8. R/B: Ready/Busy Status
9. CLE: Command Latch Enable
10. ALE: Address Latch Enable

Functional Features

• Page Program Operation: Allows data to be written in page-sized increments.
• Block Erase Operation: Enables erasing of data in block-sized units.
• Random Access: Provides random access to any location within the memory array.
• Wear-Leveling: Implements wear-leveling algorithms to distribute write operations evenly across the memory cells, extending the product's lifespan.

Advantages and Disadvantages

Advantages

• High storage capacity meets the increasing demand for data-intensive applications.
• Fast data transfer rate ensures quick access to stored information.
• Reliable performance with advanced error correction techniques.
• Low power consumption extends battery life in portable devices.
• Compact package allows for easy integration into various electronic devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Relatively higher cost compared to other types of non-volatile memory.

Working Principles

MT29F64G08CBCDBJ4-6R:D TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge on a floating gate. To read or write data, specific voltage levels are applied to the appropriate pins, allowing for data transfer between the memory cells and external devices.

Detailed Application Field Plans

The MT29F64G08CBCDBJ4-6R:D TR is widely used in various electronic devices that require high-capacity data storage. Some common application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Provides storage for high-resolution photos and videos.
3. Solid-state drives (SSDs): Used as primary storage in laptops and desktop computers, offering faster boot times and improved system performance.
4. Automotive electronics: Enables data storage for infotainment systems, navigation systems, and advanced driver-assistance systems (ADAS).
5. Industrial equipment: Used for data logging, firmware storage, and system configuration in industrial automation and control systems.

Detailed and Complete Alternative Models

• MT29F64G08CBABA: Similar to MT29F64G08CBCDBJ4-6R:D TR, but with a different package type.
• MT29F64G08CBACD: Offers the same storage capacity and characteristics but with a different pin configuration.
• MT29F64G08CBADW: Provides an alternative package option with enhanced durability for harsh environments.

These alternative models offer similar functionality and can be used as replacements based on specific requirements.

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