Micron Technology Inc.
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MT29F256G08CMCGBJ4-37R:G

MT29F256G08CMCGBJ4-37R:G

Product Overview

Category

MT29F256G08CMCGBJ4-37R:G belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: The MT29F256G08CMCGBJ4-37R:G offers a storage capacity of 256 gigabytes (GB), allowing for ample space to store large amounts of data.
  • Fast data transfer rate: With its advanced technology, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
  • Reliable performance: The product is designed to deliver reliable performance with low power consumption, ensuring efficient operation and extended battery life.
  • Durable design: The NAND flash memory is built to withstand harsh environmental conditions, making it suitable for use in rugged devices.

Package and Quantity

The MT29F256G08CMCGBJ4-37R:G is available in a compact package that measures 14mm x 18mm. It is typically sold in bulk quantities for integration into electronic devices during manufacturing.

Essence

The essence of MT29F256G08CMCGBJ4-37R:G lies in its ability to provide high-capacity, reliable, and fast data storage for a wide range of electronic devices.

Specifications

  • Storage Capacity: 256 GB
  • Interface: NAND Flash
  • Voltage Range: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Data Transfer Rate: Up to 400 megabytes per second (MB/s)
  • Package Type: Ball Grid Array (BGA)

Detailed Pin Configuration

The MT29F256G08CMCGBJ4-37R:G has a total of 48 pins. The pin configuration is as follows:

  1. VCC
  2. VCCQ
  3. GND
  4. CE#
  5. RE#
  6. WE#
  7. CLE
  8. ALE
  9. WP#
  10. R/B#
  11. DQ0
  12. DQ1
  13. DQ2
  14. DQ3
  15. DQ4
  16. DQ5
  17. DQ6
  18. DQ7
  19. NC
  20. NC
  21. NC
  22. NC
  23. NC
  24. NC
  25. NC
  26. NC
  27. NC
  28. NC
  29. NC
  30. NC
  31. NC
  32. NC
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. NC

Functional Features

  • Error Correction Code (ECC): The NAND flash memory incorporates ECC algorithms to ensure data integrity and reliability.
  • Wear Leveling: This feature evenly distributes write operations across memory cells, extending the lifespan of the NAND flash memory.
  • Bad Block Management: The product includes mechanisms to identify and manage defective blocks, preventing data loss and maintaining optimal performance.

Advantages and Disadvantages

Advantages

  • High storage capacity allows for extensive data storage.
  • Fast data transfer rate enables quick access to stored information.
  • Reliable performance with low power consumption.
  • Durable design suitable for rugged environments.

Disadvantages

  • Relatively higher cost compared to lower-capacity storage options.
  • Limited compatibility with certain older devices that do not support NAND flash memory.

Working Principles

The MT29F256G08CMCGBJ4-37R:G utilizes the principles of NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density data storage. When data is written or read, electrical charges are applied to the memory cells, altering their states to represent binary values.

Detailed Application Field Plans

The MT29F256G08CMCGBJ4-37R:G finds application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

  1. MT29F128G08CBACAWP-IT: This model offers a storage capacity of 128 GB and similar features to the MT29F256G08CMCGBJ4-37R:G.

Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng MT29F256G08CMCGBJ4-37R:G trong giải pháp kỹ thuật

  1. Question: What is the capacity of the MT29F256G08CMCGBJ4-37R:G?
    Answer: The MT29F256G08CMCGBJ4-37R:G has a capacity of 256 gigabits (32 gigabytes).

  2. Question: What is the interface used for this memory device?
    Answer: The MT29F256G08CMCGBJ4-37R:G uses a NAND Flash interface.

  3. Question: What is the operating voltage range for this memory device?
    Answer: The operating voltage range for the MT29F256G08CMCGBJ4-37R:G is typically between 2.7V and 3.6V.

  4. Question: What is the maximum operating temperature for this memory device?
    Answer: The MT29F256G08CMCGBJ4-37R:G has a maximum operating temperature of 85 degrees Celsius.

  5. Question: Can this memory device be used in automotive applications?
    Answer: Yes, the MT29F256G08CMCGBJ4-37R:G is designed to meet the requirements for automotive applications.

  6. Question: Does this memory device support wear-leveling algorithms?
    Answer: Yes, the MT29F256G08CMCGBJ4-37R:G supports wear-leveling algorithms to ensure even distribution of data writes across the memory cells.

  7. Question: What is the page size of this memory device?
    Answer: The MT29F256G08CMCGBJ4-37R:G has a page size of 8 kilobytes.

  8. Question: Is this memory device compatible with other NAND Flash devices?
    Answer: Yes, the MT29F256G08CMCGBJ4-37R:G is compatible with other NAND Flash devices that use the same interface and voltage range.

  9. Question: Can this memory device be used in industrial control systems?
    Answer: Yes, the MT29F256G08CMCGBJ4-37R:G is suitable for use in industrial control systems due to its reliability and extended temperature range.

  10. Question: Does this memory device support hardware data protection features?
    Answer: Yes, the MT29F256G08CMCGBJ4-37R:G supports hardware data protection features such as ECC (Error Correction Code) and bad block management.