MT29F1G08ABBEAMD-IT:E TR

Product Overview

Category

MT29F1G08ABBEAMD-IT:E TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G08ABBEAMD-IT:E TR offers a storage capacity of 1 gigabit.
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: It is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F1G08ABBEAMD-IT:E TR comes in a small form factor, enabling integration into space-constrained devices.

Package and Quantity

The MT29F1G08ABBEAMD-IT:E TR is packaged in a surface-mount TSOP (Thin Small Outline Package) with 48 pins. It is typically sold in reels containing a specific quantity, usually 250 or 500 units per reel.

Specifications

• Storage Capacity: 1 gigabit (128 megabytes)
• Interface: NAND Flash
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second (read), up to 100 megabytes per second (write)

Pin Configuration

The detailed pin configuration of the MT29F1G08ABBEAMD-IT:E TR is as follows:

1. VCC
2. ALE/CLE
3. CE#
4. RE#
5. WE#
6. R/B#
7. NC
8. NC
9. NC
10. NC
11. NC
12. NC
13. NC
14. NC
15. NC
16. NC
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. GND

Functional Features

• Block Erase: The MT29F1G08ABBEAMD-IT:E TR supports block erase operations, allowing for efficient management of data.
• Page Program: It enables the programming of individual memory pages, facilitating flexible data storage.
• Read and Write Operations: This NAND flash memory allows for high-speed read and write operations, ensuring quick access to stored data.
• Error Correction Code (ECC): The MT29F1G08ABBEAMD-IT:E TR incorporates ECC algorithms to detect and correct errors, enhancing data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity for data-intensive applications.
• Fast data transfer rate improves overall system performance.
• Reliable performance ensures data integrity.
• Low power consumption extends battery life in portable devices.
• Compact package enables integration into space-constrained designs.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles before it may become unreliable.
• Higher cost per gigabyte compared to traditional hard disk drives.

Working Principles

The MT29F1G08ABBEAMD-IT:E TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized into blocks. Each cell can store multiple bits of information using a floating-gate transistor structure. When data is written, electrons are trapped in the floating gate, representing a logical "1" state. Erasing the data involves removing the trapped electrons, returning the cell to a logical "0" state. The read operation retrieves the stored data by sensing the electrical charge in each memory cell.

Detailed Application Field Plans

The MT29F1G08ABBEAMD-IT:E TR is widely used in various electronic devices and applications, including: - Smartphones and tablets for storing operating systems, applications, and user data. - Digital cameras for capturing and storing high-resolution photos and videos. - Solid-state drives (SSDs) for fast and reliable storage in computer systems. - Industrial control systems for data logging and firmware storage. - Automotive electronics for infotainment systems, navigation, and driver assistance.

Alternative Models

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