MT29F128G08CBEBBL85C3WC1-R

Product Overview

Category

MT29F128G08CBEBBL85C3WC1-R belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F128G08CBEBBL85C3WC1-R offers a storage capacity of 128 gigabytes (GB), allowing users to store large amounts of data.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and durability.
• Low power consumption: The MT29F128G08CBEBBL85C3WC1-R is energy-efficient, consuming minimal power during operation.
• Compact package: This NAND flash memory comes in a compact package, making it suitable for integration into small-sized electronic devices.

Packaging/Quantity

The MT29F128G08CBEBBL85C3WC1-R is typically packaged in a surface-mount technology (SMT) package. It is available in different quantities depending on the requirements of the customer or manufacturer.

Specifications

• Storage Capacity: 128 GB
• Interface: NAND
• Package Type: SMT
• Operating Voltage: 3.3V
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of MT29F128G08CBEBBL85C3WC1-R includes the following pins: - VCC: Power supply pin - GND: Ground pin - CE: Chip enable pin - WE: Write enable pin - RE: Read enable pin - A0-A18: Address pins - DQ0-DQ7: Data input/output pins - R/B: Ready/busy pin - CLE: Command latch enable pin - ALE: Address latch enable pin

Functional Features

• High-speed data transfer: The MT29F128G08CBEBBL85C3WC1-R offers fast read and write speeds, allowing for efficient data transfer between the memory and the device.
• Error correction: This NAND flash memory incorporates error correction techniques to ensure data integrity and minimize the risk of data loss or corruption.
• Wear leveling: The product employs wear leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the NAND flash memory.
• Bad block management: It includes mechanisms to identify and manage bad blocks, ensuring reliable operation even in the presence of defective memory cells.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• Relatively higher cost compared to other types of memory
• Limited endurance (number of program/erase cycles)

Working Principles

The MT29F128G08CBEBBL85C3WC1-R utilizes NAND flash memory technology. It stores data by trapping electric charges within a grid of memory cells. These charges represent binary information (0s and 1s). When reading data, the charges are detected and converted back into digital signals. During writing, the charges are either added or removed from the memory cells based on the desired data.

Detailed Application Field Plans

The MT29F128G08CBEBBL85C3WC1-R is widely used in various electronic devices that require high-capacity data storage. Some of the common application fields include: - Smartphones and tablets - Digital cameras and camcorders - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

• MT29F128G08CBEBBL85C3WC2-R: Similar to MT29F128G08CBEBBL85C3WC1-R, but with a different package type.
• MT29F256G08CBEBBL85C3WC1-R: Offers double the storage capacity (256 GB) compared to MT29F128G08CBEBBL85C3WC1-R.
• MT29F64G08CBEBBL85C3WC1-R: Provides lower storage capacity (64 GB) but at a more affordable price point.

In conclusion, the MT29F128G08CBEBBL85C3WC1-R is a high-capacity NAND flash memory that offers fast data transfer rates, reliable performance, and low power consumption. It finds applications in various electronic devices and is available in alternative models with different specifications to