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MT25QL128ABA1ESE-MSIT TR

MT25QL128ABA1ESE-MSIT TR

Product Overview

Category

MT25QL128ABA1ESE-MSIT TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage and retrieval in various electronic devices, such as computers, smartphones, tablets, and embedded systems.

Characteristics

  • Non-volatile: The data stored in this memory device is retained even when power is turned off.
  • High capacity: MT25QL128ABA1ESE-MSIT TR offers a storage capacity of 128 megabits (16 megabytes).
  • Fast access time: It provides quick read and write operations, ensuring efficient data transfer.
  • Reliable: This memory device has high endurance and can withstand numerous read and write cycles without degradation.
  • Low power consumption: MT25QL128ABA1ESE-MSIT TR is designed to consume minimal power, making it suitable for battery-powered devices.
  • Compact package: It comes in a small form factor, allowing for easy integration into various electronic systems.

Packaging/Quantity

MT25QL128ABA1ESE-MSIT TR is typically packaged in surface-mount technology (SMT) packages, such as ball grid array (BGA) or quad flat no-leads (QFN). The exact packaging and quantity may vary depending on the manufacturer and customer requirements.

Specifications

  • Memory Capacity: 128 megabits (16 megabytes)
  • Interface: Serial Peripheral Interface (SPI)
  • Operating Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: Up to 20 years
  • Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The pin configuration of MT25QL128ABA1ESE-MSIT TR is as follows:

  1. VCC: Power supply voltage
  2. GND: Ground
  3. HOLD: Suspends ongoing data transfer
  4. WP: Write protect
  5. SCK: Serial clock input
  6. SI: Serial data input
  7. SO: Serial data output
  8. CS: Chip select

Functional Features

  • High-speed read and write operations
  • Sector erase and program capability
  • Individual block erase and program capability
  • Advanced security features, such as hardware protection and secure boot
  • Efficient power management modes
  • Error correction code (ECC) for data integrity

Advantages and Disadvantages

Advantages

  • High storage capacity
  • Fast access time
  • Low power consumption
  • Compact form factor
  • Reliable and durable
  • Advanced security features

Disadvantages

  • Limited erase/program cycles
  • Relatively higher cost compared to other memory technologies

Working Principles

MT25QL128ABA1ESE-MSIT TR utilizes the Serial Peripheral Interface (SPI) protocol for communication with the host device. It stores data in non-volatile memory cells, which retain information even when power is disconnected. The memory cells are organized into sectors and blocks, allowing for efficient read, write, and erase operations.

Detailed Application Field Plans

MT25QL128ABA1ESE-MSIT TR finds applications in various fields, including: 1. Consumer electronics: Smartphones, tablets, digital cameras 2. Computing devices: Laptops, desktop computers, servers 3. Automotive systems: Infotainment systems, instrument clusters 4. Industrial automation: Programmable logic controllers (PLCs), human-machine interfaces (HMIs) 5. Internet of Things (IoT): Connected devices, sensors, gateways

Detailed and Complete Alternative Models

Some alternative models to MT25QL128ABA1ESE-MSIT TR include: 1. MT25QL256ABA1EW7-0SIT 2. S25FL128SAGMFI001 3. W25Q128JVSIQ 4. IS25LP128-JBLE

These models offer similar features and specifications, providing options for different design requirements.

Word count: 518 words

Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng MT25QL128ABA1ESE-MSIT TR trong giải pháp kỹ thuật

  1. Question: What is the MT25QL128ABA1ESE-MSIT TR?
    Answer: The MT25QL128ABA1ESE-MSIT TR is a specific model of flash memory chip manufactured by Micron Technology. It is commonly used in various technical solutions for data storage and retrieval.

  2. Question: What is the capacity of the MT25QL128ABA1ESE-MSIT TR?
    Answer: The MT25QL128ABA1ESE-MSIT TR has a capacity of 128 megabits (16 megabytes).

  3. Question: What is the interface of the MT25QL128ABA1ESE-MSIT TR?
    Answer: The MT25QL128ABA1ESE-MSIT TR uses a Serial Peripheral Interface (SPI) for communication with other devices.

  4. Question: What is the operating voltage range of the MT25QL128ABA1ESE-MSIT TR?
    Answer: The MT25QL128ABA1ESE-MSIT TR operates at a voltage range of 2.7V to 3.6V.

  5. Question: What is the maximum clock frequency supported by the MT25QL128ABA1ESE-MSIT TR?
    Answer: The MT25QL128ABA1ESE-MSIT TR supports a maximum clock frequency of 133 MHz.

  6. Question: Can the MT25QL128ABA1ESE-MSIT TR be used in automotive applications?
    Answer: Yes, the MT25QL128ABA1ESE-MSIT TR is designed to meet the requirements of automotive applications, including extended temperature ranges and high reliability.

  7. Question: Does the MT25QL128ABA1ESE-MSIT TR support hardware and software write protection?
    Answer: Yes, the MT25QL128ABA1ESE-MSIT TR provides both hardware and software write protection features to prevent accidental or unauthorized modification of data.

  8. Question: What is the typical endurance of the MT25QL128ABA1ESE-MSIT TR?
    Answer: The MT25QL128ABA1ESE-MSIT TR has a typical endurance of 100,000 program/erase cycles per sector.

  9. Question: Is the MT25QL128ABA1ESE-MSIT TR compatible with other flash memory devices?
    Answer: Yes, the MT25QL128ABA1ESE-MSIT TR is designed to be compatible with industry-standard flash memory devices, allowing for easy integration into existing systems.

  10. Question: Can the MT25QL128ABA1ESE-MSIT TR be used in battery-powered devices?
    Answer: Yes, the MT25QL128ABA1ESE-MSIT TR is designed to operate efficiently in low-power environments, making it suitable for use in battery-powered devices.