M29F800DT70N1

Product Overview

Category

M29F800DT70N1 belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and digital cameras.

Characteristics

• Non-volatile memory: The stored data is retained even when power is removed.
• High storage capacity: The M29F800DT70N1 has a capacity of 8 megabits (1 megabyte).
• Fast access time: It offers quick read and write operations, ensuring efficient data transfer.
• Reliable performance: This flash memory chip is designed to withstand frequent read/write cycles without compromising data integrity.

Package

The M29F800DT70N1 is available in a standard plastic package, which provides protection against physical damage and environmental factors.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

The M29F800DT70N1 is typically packaged in reels or trays, with each package containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Capacity: 8 Megabits (1 Megabyte)
• Organization: 1M x 8
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The M29F800DT70N1 features a parallel interface with the following pin configuration:

1. VCC: Power supply voltage
2. A0-A19: Address inputs
3. DQ0-DQ7: Data input/output lines
4. WE#: Write enable control input
5. CE#: Chip enable control input
6. OE#: Output enable control input
7. RP#/BYTE#: Reset/byte enable control input
8. VSS: Ground

Functional Features

• Erase and Program Operations: The M29F800DT70N1 supports both sector erase and byte program operations, allowing for flexible data manipulation.
• Block Locking: Certain sectors of the memory can be locked to prevent accidental erasure or modification.
• Automatic Page Write: This feature enables efficient programming by allowing data to be written directly to a specific page without erasing the entire sector.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Reliable performance
• Flexible erase and program operations
• Block locking feature for data protection

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before it may start to degrade.
• Relatively higher cost compared to other types of memory.

Working Principles

The M29F800DT70N1 utilizes a floating gate transistor technology to store data. It consists of an array of memory cells, each capable of storing a single bit of information. Data is stored by trapping electric charges in the floating gate, which alters the cell's conductivity and represents either a "0" or a "1". The state of each memory cell can be read, erased, or programmed using specific voltage levels and control signals.

Detailed Application Field Plans

The M29F800DT70N1 finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Smartphones - Tablets - Digital cameras - Gaming consoles

Its high storage capacity and fast access time make it suitable for storing operating systems, firmware, application software, and user data in these devices.

Detailed and Complete Alternative Models

Some alternative models to the M29F800DT70N1 include: - M29F800DB70N1 - M29F800FB70N1 - M29F800DT70M1 - M29F800DB70M1

These alternative models may have slightly different specifications or features, but they serve a similar purpose and can be used as substitutes depending on specific requirements.

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