M29F800DB70N6E

Product Overview

• Category: Integrated Circuit (IC)
• Use: Non-volatile Memory
• Characteristics: High-density, Flash memory
• Package: 48-pin TSOP (Thin Small Outline Package)
• Essence: Reliable and high-performance non-volatile memory solution
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: Flash
• Memory Size: 8 Megabits (1 Megabyte)
• Organization: 1M x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Operating Temperature: -40°C to +85°C
• Interface: Parallel
• Pin Count: 48

Detailed Pin Configuration

The M29F800DB70N6E has a total of 48 pins. The pin configuration is as follows:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. A16 - Address Input
18. A17 - Address Input
19. A18 - Address Input
20. VSS - Ground
21. DQ0 - Data Input/Output
22. DQ1 - Data Input/Output
23. DQ2 - Data Input/Output
24. DQ3 - Data Input/Output
25. DQ4 - Data Input/Output
26. DQ5 - Data Input/Output
27. DQ6 - Data Input/Output
28. DQ7 - Data Input/Output
29. WE# - Write Enable
30. CE# - Chip Enable
31. OE# - Output Enable
32. RESET# - Reset
33. VCC - Power Supply
34. RP - Ready/Busy Output
35. BYTE# - Byte/Word Organization Selection 36-48. NC - No Connection

Functional Features

• High-density non-volatile memory solution
• Fast access time of 70 ns
• Reliable and durable flash memory technology
• Low power consumption
• Easy integration into existing systems
• Compatible with parallel interface

Advantages and Disadvantages

Advantages: - High storage capacity - Fast access time - Non-volatile memory retains data even without power - Easy to integrate into various systems - Reliable and durable

Disadvantages: - Limited write endurance compared to other memory technologies - Higher cost per bit compared to some alternatives

Working Principles

The M29F800DB70N6E is based on flash memory technology, which allows for non-volatile storage of data. It utilizes a parallel interface for communication with the host system. The memory can be read from or written to by enabling the appropriate control signals (CE#, OE#, WE#) and providing the desired address and data inputs.

Detailed Application Field Plans

The M29F800DB70N6E is commonly used in various electronic devices and systems that require reliable and high-density non-volatile memory. Some potential application fields include:

1. Consumer Electronics: Used in digital cameras, MP3 players, and portable gaming devices for data storage.
2. Automotive: Integrated into automotive systems for storing firmware, configuration data, and event logs.
3. Industrial Control Systems: Utilized in industrial automation equipment for program storage and data logging.
4. Communication Devices: Incorporated into routers, switches, and network equipment for firmware storage.

Detailed and Complete Alternative Models

1. M29F800DB70N6 - Similar to M29F800DB70N6E but without the "E" suffix indicating tape and reel packaging.
2. M29F800DT70N6E - Same memory size and characteristics as M29F800DB70N6E but with a different package (TSOP-48).
3. M29F800DB70M1 - Offers the same functionality as M29F800DB70N6E but with a different organization (512K x 16 bits).

These alternative models provide similar features and can be considered based on specific requirements and compatibility with existing systems.

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