M29F400BB55N6T TR

Product Overview

Category

M29F400BB55N6T TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The M29F400BB55N6T TR has a storage capacity of 4 megabits (512 kilobytes).
• Fast access time: It offers quick read and write operations, ensuring efficient data transfer.
• Low power consumption: The device is designed to minimize power usage, making it suitable for battery-powered applications.

Package

The M29F400BB55N6T TR comes in a surface-mount package, which allows for easy integration onto circuit boards.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The M29F400BB55N6T TR is typically packaged in reels or tubes, with a quantity of 2500 units per reel/tube.

Specifications

• Memory Type: Flash
• Memory Size: 4 Megabits (512 Kilobytes)
• Organization: 512K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 55 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. VSS - Ground
10. A8 - Address Input
11. A9 - Address Input
12. A10 - Address Input
13. A11 - Address Input
14. A12 - Address Input
15. A13 - Address Input
16. A14 - Address Input
17. A15 - Address Input
18. VCC - Power Supply
19. DQ0 - Data Input/Output
20. DQ1 - Data Input/Output
21. DQ2 - Data Input/Output
22. DQ3 - Data Input/Output
23. DQ4 - Data Input/Output
24. DQ5 - Data Input/Output
25. DQ6 - Data Input/Output
26. DQ7 - Data Input/Output
27. WE# - Write Enable
28. CE# - Chip Enable
29. OE# - Output Enable
30. RP# - Reset/Block Protect
31. BYTE# - Byte/Word Organization
32. VSS - Ground
33. NC - No Connection
34. NC - No Connection
35. NC - No Connection
36. NC - No Connection
37. NC - No Connection
38. NC - No Connection
39. NC - No Connection
40. NC - No Connection

Functional Features

• Block Erase: The M29F400BB55N6T TR supports block erase operations, allowing for efficient erasure of large sections of memory.
• Page Program: It enables fast programming of data in page mode, enhancing write performance.
• Hardware Reset: The device can be reset using the RP# pin, ensuring reliable operation.
• Software Protection: The M29F400BB55N6T TR offers software protection mechanisms to prevent unauthorized access to stored data.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity allows for storing large amounts of information.
• Fast access time enables quick read and write operations.
• Low power consumption makes it suitable for battery-powered devices.

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before degradation occurs.
• Relatively higher cost compared to other types of memory.

Working Principles

The M29F400BB55N6T TR utilizes flash memory technology, which is based on the use of floating-gate transistors. These transistors can store electrical charges, representing binary data (0s and 1s). The stored charges can be read, erased, and programmed using specific voltage levels applied to the memory cells.

During read operations, the stored charges are sensed, allowing the retrieval of the stored data. Write operations involve applying higher voltages to the memory cells, which modify the charge levels and thus change the stored data.

Detailed Application Field Plans

The M29F400BB55N6T TR finds