AT49F001-55TC

Product Overview

Category

AT49F001-55TC belongs to the category of Flash Memory.

Use

It is primarily used for storing and retrieving digital information in electronic devices.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High storage capacity: Can store large amounts of data.
• Fast read and write speeds: Allows for quick access to stored information.
• Reliable: Provides secure data storage with minimal risk of data loss.
• Compact package: Designed to fit into various electronic devices.

Package

AT49F001-55TC comes in a compact Thin Small Outline Package (TSOP).

Essence

The essence of AT49F001-55TC lies in its ability to provide reliable and high-capacity storage for electronic devices.

Packaging/Quantity

This product is typically packaged in reels, with each reel containing a specific quantity of AT49F001-55TC units.

Specifications

• Storage Capacity: 1 Megabit (128 Kilobytes)
• Operating Voltage: 5V
• Access Time: 55 nanoseconds
• Interface: Parallel
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT49F001-55TC has a total of 32 pins. The pin configuration is as follows:

1. VCC - Power Supply
2. A0-A16 - Address Inputs
3. CE - Chip Enable
4. OE - Output Enable
5. WE - Write Enable
6. BYTE - Byte/Word Organization Selection
7. RESET - Reset Input
8. NC - No Connection
9. DQ0-DQ7 - Data Input/Output
10. VSS - Ground

Functional Features

• Easy integration: Compatible with various microcontrollers and systems.
• Versatile operation modes: Supports both read and write operations.
• Sector erase capability: Allows for selective erasure of specific memory sectors.
• Built-in protection mechanisms: Provides data security through lock bits and password protection.

Advantages

• High storage capacity enables the storage of large amounts of data.
• Fast read and write speeds allow for quick access to stored information.
• Non-volatile memory ensures data retention even during power loss.
• Compact package size facilitates integration into various electronic devices.
• Reliable performance with built-in protection mechanisms safeguards data integrity.

Disadvantages

• Limited erase/program cycle endurance may require careful management in certain applications.
• Parallel interface may not be suitable for systems requiring high-speed serial communication.

Working Principles

AT49F001-55TC utilizes a floating gate transistor technology to store digital information. The memory cells consist of transistors that can be electrically programmed and erased. When data is written, charges are trapped in the floating gate, representing binary values. These charges can be removed during the erase process, allowing the cells to be rewritten.

Detailed Application Field Plans

AT49F001-55TC finds application in various electronic devices, including but not limited to: - Microcontrollers - Embedded systems - Consumer electronics - Communication devices - Automotive electronics

Detailed and Complete Alternative Models

1. AT49F002-70TC: 2 Megabit Flash Memory with faster access time.
2. AT49F010-90TC: 1 Megabit Flash Memory with higher operating voltage.
3. AT49F040-55TC: 4 Megabit Flash Memory with similar characteristics.

These alternative models offer different specifications and capacities to cater to diverse application requirements.

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