AT49BV802AT-70CI

Product Overview

Category

The AT49BV802AT-70CI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The AT49BV802AT-70CI retains data even when power is removed.
• High capacity: It has a storage capacity of 8 megabits (1 megabyte).
• Fast access time: The device offers quick read and write operations.
• Low power consumption: It operates efficiently with minimal power requirements.

Package

The AT49BV802AT-70CI is available in a compact integrated circuit package.

Essence

This product is an essential component for data storage and retrieval in various electronic applications.

Packaging/Quantity

The AT49BV802AT-70CI is typically packaged in reels or trays, with a quantity of multiple units per package.

Specifications

• Memory Capacity: 8 Megabits (1 Megabyte)
• Access Time: 70 nanoseconds
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The AT49BV802AT-70CI has a total of 32 pins. Here is the detailed pin configuration:

1. A0-A18: Address Inputs
2. DQ0-DQ15: Data Input/Output
3. WE#: Write Enable
4. CE#: Chip Enable
5. OE#: Output Enable
6. BYTE#: Byte Enable
7. VCC: Power Supply
8. GND: Ground

Functional Features

• Random Access: Allows direct access to any memory location.
• Erase and Program Operations: Supports both erasing and programming of data.
• Sector Architecture: Divides the memory into sectors for efficient management.
• Lock Bits: Provides protection against accidental erasure or programming.

Advantages and Disadvantages

Advantages

• Non-volatile nature ensures data retention even during power loss.
• High storage capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Low power consumption results in energy-efficient operation.

Disadvantages

• Limited endurance: The memory cells have a finite number of erase/write cycles.
• Relatively higher cost compared to other memory technologies.
• Requires additional circuitry for interfacing with the system.

Working Principles

The AT49BV802AT-70CI utilizes flash memory technology. It stores data by trapping electric charges within floating gate transistors. These charges represent binary values, which can be read, erased, or programmed using specific voltage levels. The device operates based on the principles of tunneling and Fowler-Nordheim injection.

Detailed Application Field Plans

The AT49BV802AT-70CI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49BV1614T-90CI: 16 Megabit (2 Megabyte) flash memory with faster access time.
2. AT49BV4096A-90TI: 4 Megabit (512 Kilobyte) flash memory with lower power consumption.
3. AT49BV322D-70TU: 32 Megabit (4 Megabyte) flash memory with extended temperature range.

These alternative models offer different capacities, features, and specifications to cater to diverse application requirements.

Word count: 389 words