AT29BV040A-20TU-T

Product Overview

Category

AT29BV040A-20TU-T belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The AT29BV040A-20TU-T retains stored data even when power is removed.
• High capacity: It has a storage capacity of 4 megabits (512 kilobytes).
• Fast access time: The device offers a fast access time of 20 nanoseconds.
• Low power consumption: It operates at low power, making it suitable for battery-powered devices.

Package

The AT29BV040A-20TU-T is available in a surface-mount TSOP package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

The AT29BV040A-20TU-T is typically packaged in reels, with each reel containing a specific quantity of devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Organization: 512K x 8 bits
• Voltage Range: 2.7V - 3.6V
• Access Time: 20 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT29BV040A-20TU-T has a total of 32 pins. The pin configuration is as follows:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. A15
14. A13
15. A8
16. A9
17. A11
18. A10
19. OE#
20. CE#
21. WE#
22. NC
23. I/O0
24. I/O1
25. I/O2
26. I/O3
27. I/O4
28. I/O5
29. I/O6
30. I/O7
31. GND
32. NC

Functional Features

• Byte-wide operations: The AT29BV040A-20TU-T supports byte-level read and write operations.
• Sector erase capability: It allows for erasing data in sectors, enabling efficient memory management.
• Hardware and software protection: The device offers protection mechanisms to prevent accidental modification or erasure of stored data.
• Fast programming time: The AT29BV040A-20TU-T provides a fast programming time, reducing overall system latency.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity allows for storing large amounts of data.
• Low power consumption makes it suitable for battery-powered devices.
• Fast access time enables quick data retrieval.

Disadvantages

• Limited erase/program cycle endurance may affect the lifespan of the device.
• Relatively higher cost compared to other memory technologies.

Working Principles

The AT29BV040A-20TU-T utilizes flash memory technology to store data. It consists of floating-gate transistors that can trap electrical charges, representing binary information. These charges can be electrically programmed or erased using specific voltage levels. When data is read from the memory, the charge level of each transistor is detected, allowing the retrieval of stored information.

Detailed Application Field Plans

The AT29BV040A-20TU-T finds applications in various electronic systems, including but not limited to: - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices - Medical equipment

Detailed and Complete Alternative Models

1. AT29BV040A-25TU-T: Similar to the AT29BV040A-20TU-T, but with a faster access time of 25 ns.
2. AT29BV040A-15TU-T: Similar to the AT29BV040A-20TU-T, but with a slower access time of 15 ns.
3. AT29BV080A-20TU-T: Double the capacity of the AT29BV040A-20TU-T, with 8 megabits (1 megabyte) of storage.

These alternative models provide options with different performance characteristics to suit specific application requirements.

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