DS1220AD-150+ Encyclopedia Entry

Product Overview

Category

The DS1220AD-150+ belongs to the category of non-volatile static random-access memory (NVSRAM).

Use

This product is primarily used for storing critical data in applications that require both high-speed read/write operations and non-volatility.

Characteristics

• Non-volatile: The DS1220AD-150+ retains stored data even when power is disconnected.
• High-speed operation: It offers fast access times, making it suitable for time-critical applications.
• Low power consumption: The device operates efficiently, minimizing power requirements.
• Durable package: The DS1220AD-150+ is housed in a robust package, ensuring protection against external factors.

Package and Quantity

The DS1220AD-150+ is available in a standard 24-pin dual in-line package (DIP). Each package contains one unit of the product.

Specifications

• Memory capacity: 16 kilobits (2 kilobytes)
• Organization: 2K x 8 bits
• Supply voltage: 4.5V to 5.5V
• Access time: 150 nanoseconds
• Standby current: 100 microamps (typical)
• Operating temperature range: -40°C to +85°C

Pin Configuration

The DS1220AD-150+ features a 24-pin DIP package with the following pin configuration:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A10)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Ground (GND)
7. No Connection (NC)
8. VCC

Functional Features

• High-speed read and write operations: The DS1220AD-150+ offers fast access times, enabling quick data retrieval and storage.
• Non-volatile storage: The device retains stored data even when power is disconnected, ensuring data integrity.
• Easy integration: The DS1220AD-150+ can be easily integrated into existing systems due to its standard pin configuration and compatibility with common microcontrollers.

Advantages and Disadvantages

Advantages

• Fast access times for time-critical applications.
• Non-volatile storage ensures data integrity.
• Low power consumption for efficient operation.
• Durable package protects against external factors.

Disadvantages

• Limited memory capacity compared to other storage options.
• Relatively higher cost per kilobit compared to alternative memory technologies.

Working Principles

The DS1220AD-150+ utilizes a combination of static random-access memory (SRAM) and electrically erasable programmable read-only memory (EEPROM) technologies. It employs a floating-gate transistor design to store data in non-volatile memory cells. When data is written, the charge on the floating gate is altered, allowing the device to retain the information even without power.

Application Field Plans

The DS1220AD-150+ finds application in various fields, including: 1. Industrial automation systems 2. Medical equipment 3. Automotive electronics 4. Aerospace and defense systems 5. Communication infrastructure

Alternative Models

Several alternative models offer similar functionality to the DS1220AD-150+. These include: - DS1225AD-150+: Offers higher memory capacity (64 kilobits) while maintaining the same characteristics and pin configuration. - M48Z02-150PC1: Provides 16 kilobits of non-volatile SRAM with a similar access time and pin configuration.

In conclusion, the DS1220AD-150+ is a non-volatile static random-access memory device that combines high-speed operation with data retention capabilities. Its robust package, low power consumption, and easy integration make it suitable for various applications in different industries.

Word count: 550 words