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IRLML2030TRPBF

IRLML2030TRPBF

Product Overview

Category

The IRLML2030TRPBF belongs to the category of power MOSFETs.

Use

It is commonly used in various electronic circuits and applications that require switching and amplification of electrical signals.

Characteristics

  • Low on-resistance
  • High current capability
  • Fast switching speed
  • Low gate drive power
  • Small package size

Package

The IRLML2030TRPBF is typically available in a small outline transistor (SOT-23) package.

Essence

This MOSFET is essential for efficient power management and control in electronic devices and systems.

Packaging/Quantity

It is usually supplied in reels containing a specific quantity, such as 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 20V
  • Continuous Drain Current (ID): 3.7A
  • RDS(ON) (Max) @ VGS = 4.5V: 0.06Ω
  • RDS(ON) (Max) @ VGS = 2.5V: 0.08Ω
  • Total Gate Charge (Qg): 6.5nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IRLML2030TRPBF has three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • Low power consumption
  • High efficiency
  • Reliable switching performance
  • Suitable for battery-powered applications
  • Enhanced thermal performance

Advantages and Disadvantages

Advantages

  • Compact size
  • Low on-resistance
  • Fast switching speed
  • Wide operating temperature range
  • Suitable for portable and space-constrained designs

Disadvantages

  • Limited maximum drain-source voltage
  • Sensitivity to electrostatic discharge (ESD)

Working Principles

The IRLML2030TRPBF operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When the gate voltage is applied, it creates an electric field that modulates the conductivity of the channel, allowing for efficient switching and control of power flow.

Detailed Application Field Plans

The IRLML2030TRPBF is widely used in the following applications: - Battery management systems - Portable electronic devices - Power supply units - Motor control circuits - LED lighting systems - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the IRLML2030TRPBF include: - IRLML2246TRPBF - IRLML6402TRPBF - IRLML2502TRPBF - IRLML6302TRPBF

In conclusion, the IRLML2030TRPBF power MOSFET offers a compact and efficient solution for various electronic applications, providing reliable switching performance and low power consumption.

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Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng IRLML2030TRPBF trong giải pháp kỹ thuật

  1. What is the maximum drain-source voltage of IRLML2030TRPBF?

    • The maximum drain-source voltage of IRLML2030TRPBF is 20V.
  2. What is the continuous drain current of IRLML2030TRPBF?

    • The continuous drain current of IRLML2030TRPBF is 3.6A.
  3. What is the on-resistance of IRLML2030TRPBF?

    • The on-resistance of IRLML2030TRPBF is typically 0.06 ohms.
  4. What is the threshold voltage of IRLML2030TRPBF?

    • The threshold voltage of IRLML2030TRPBF is typically 1.5V.
  5. What are the typical applications for IRLML2030TRPBF?

    • IRLML2030TRPBF is commonly used in load and power switches, battery management, and DC-DC converters.
  6. What is the operating temperature range of IRLML2030TRPBF?

    • The operating temperature range of IRLML2030TRPBF is -55°C to 150°C.
  7. Is IRLML2030TRPBF suitable for automotive applications?

    • Yes, IRLML2030TRPBF is suitable for automotive applications due to its high reliability and performance.
  8. Does IRLML2030TRPBF have built-in ESD protection?

    • Yes, IRLML2030TRPBF features built-in ESD protection, making it suitable for robust applications.
  9. What is the package type of IRLML2030TRPBF?

    • IRLML2030TRPBF is available in a SOT-23 package.
  10. Can I use IRLML2030TRPBF in low-power portable devices?

    • Yes, IRLML2030TRPBF is suitable for low-power portable devices due to its low on-resistance and compact package size.