IRFS4229PBF

Product Category: Power MOSFET

Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplifying electrical signals in power electronics applications - Characteristics: High voltage, high current handling capability, low on-resistance, fast switching speed - Package: TO-263 (D2PAK) - Essence: Efficient power management and control - Packaging/Quantity: Typically packaged in reels of 800 units

Specifications: - Voltage Rating: 250V - Current Rating: 38A - On-Resistance: 11.5mΩ - Gate Threshold Voltage: 2V - Power Dissipation: 200W

Detailed Pin Configuration: The IRFS4229PBF features a standard TO-263 pin configuration with three pins: 1. Gate (G): Input for controlling the switching operation 2. Drain (D): Connects to the load or power supply 3. Source (S): Connected to ground or return path

Functional Features: - High voltage capability for power applications - Low on-resistance for reduced power loss - Fast switching speed for efficient operation - Robust construction for reliability in demanding environments

Advantages: - Suitable for high-power applications - Low conduction losses - Enhanced thermal performance - Reliable and durable

Disadvantages: - Higher cost compared to lower-rated MOSFETs - Larger physical footprint due to higher power handling capability

Working Principles: The IRFS4229PBF operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. When a sufficient gate voltage is applied, the MOSFET switches on, allowing current to flow through the device.

Detailed Application Field Plans: - Industrial motor drives - Power supplies - Inverters - Electric vehicles - Renewable energy systems

Detailed and Complete Alternative Models: 1. Infineon IPP038N25N3 G 2. Vishay SIHP38N25E-GE3 3. ON Semiconductor NTP38N25G

This comprehensive entry provides an in-depth understanding of the IRFS4229PBF, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.