IRFH5301TRPBF

Product Overview

Category: Power MOSFET
Use: High-frequency power conversion applications
Characteristics: High efficiency, low on-resistance, small package size
Package: DFN5x6
Essence: Advanced power management solution
Packaging/Quantity: Tape and reel, 3000 pieces

Specifications

• Voltage Rating: 100V
• Continuous Drain Current: 31A
• RDS(ON): 3.8mΩ
• Gate Charge (Qg): 18nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IRFH5301TRPBF features a DFN5x6 package with the following pin configuration: 1. Gate 2. Drain 3. Source 4. N/C 5. Source

Functional Features

• High efficiency in high-frequency applications
• Low on-resistance for reduced power loss
• Compact package size for space-constrained designs
• Enhanced thermal performance

Advantages and Disadvantages

Advantages: - High efficiency - Low power loss - Compact design - Excellent thermal performance

Disadvantages: - Higher cost compared to standard MOSFETs - Sensitive to voltage spikes

Working Principles

The IRFH5301TRPBF operates based on the principles of field-effect transistors, utilizing its low on-resistance to efficiently control power flow in high-frequency applications.

Detailed Application Field Plans

This power MOSFET is ideal for use in: - Switching power supplies - DC-DC converters - Motor drives - Class D audio amplifiers

Detailed and Complete Alternative Models

1. IRFH5301: Similar specifications and package, from the same manufacturer
2. IXFH31N100: Comparable power MOSFET from a different manufacturer
3. FDMS86181: Alternative option with similar characteristics

In conclusion, the IRFH5301TRPBF is a high-performance power MOSFET suitable for various high-frequency power conversion applications, offering high efficiency and compact design. While it may have a higher cost and sensitivity to voltage spikes, its advantages outweigh these limitations, making it a preferred choice for demanding power management solutions.

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