IRF9540NPBF

Product Category: Power MOSFET

Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplification in power electronics applications - Characteristics: High voltage, high current capability, low on-resistance - Package: TO-220AB - Essence: N-channel power MOSFET - Packaging/Quantity: Available in reels of 50 or 100 units

Specifications: - Drain-Source Voltage (VDS): 100V - Continuous Drain Current (ID): 23A - On-Resistance (RDS(on)): 0.117Ω - Gate-Source Voltage (VGS): ±20V - Power Dissipation (PD): 94W

Detailed Pin Configuration: - Pin 1 (Gate): Input for controlling the switching of the MOSFET - Pin 2 (Drain): Connection to the load or power supply - Pin 3 (Source): Common connection for the MOSFET

Functional Features: - Fast switching speed - Low gate drive power required - High input impedance - Low input capacitance

Advantages: - High efficiency in power conversion - Suitable for high-frequency applications - Low conduction losses - Good thermal performance

Disadvantages: - Sensitivity to static electricity - Gate-source voltage limitations - Potential for thermal runaway if not properly heatsinked

Working Principles: The IRF9540NPBF operates based on the principle of field-effect transistors, where the flow of current between the drain and source terminals is controlled by the voltage applied to the gate terminal. When a sufficient voltage is applied to the gate, the MOSFET allows current to flow from the drain to the source, effectively acting as a switch.

Detailed Application Field Plans: - Switching power supplies - Motor control - DC-DC converters - Inverters - Audio amplifiers

Detailed and Complete Alternative Models: - IRF540NPBF - IRF840NPBF - IRF3205PBF - IRF3710PBF

This completes the entry for the IRF9540NPBF Power MOSFET.