IPW65R065C7XKSA1

Product Overview

Category

The IPW65R065C7XKSA1 belongs to the category of power MOSFETs.

Use

It is used as a high-voltage switching device in various electronic applications.

Characteristics

• High voltage capability
• Low gate charge
• Fast switching speed
• Low on-resistance

Package

The IPW65R065C7XKSA1 is typically available in a TO-247 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

• Drain-Source Voltage (VDS): 650V
• Continuous Drain Current (ID): 52A
• Power Dissipation (PD): 300W
• Gate-Source Voltage (VGS): ±20V
• On-Resistance (RDS(on)): 0.065Ω

Detailed Pin Configuration

The IPW65R065C7XKSA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High voltage capability allows for use in demanding applications
• Low gate charge enables fast switching
• Low on-resistance minimizes power loss

Advantages

• Suitable for high-power applications
• Fast switching speed
• Low power dissipation

Disadvantages

• May require careful handling due to high voltage capability
• Higher cost compared to lower voltage MOSFETs

Working Principles

The IPW65R065C7XKSA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The IPW65R065C7XKSA1 is commonly used in the following applications: - Switched-mode power supplies - Motor control - Inverters - Solar inverters - LED lighting

Detailed and Complete Alternative Models

Some alternative models to the IPW65R065C7XKSA1 include: - IRFP4568PbF - FDPF51N25T - STW45NM50FD

In conclusion, the IPW65R065C7XKSA1 is a high-voltage power MOSFET with excellent characteristics suitable for a wide range of high-power electronic applications.

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