IPW60R180C7XKSA1
Product Overview
- Category: Power MOSFET
- Use: Power switching applications
- Characteristics: High voltage, low on-resistance, fast switching speed
- Package: TO-247
- Essence: Efficient power management
- Packaging/Quantity: Typically sold in reels of 500 units
Specifications
- Voltage Rating: 600V
- Current Rating: 60A
- On-Resistance: 0.18Ω
- Gate Charge: 110nC
- Operating Temperature: -55°C to 150°C
Detailed Pin Configuration
The IPW60R180C7XKSA1 features a standard TO-247 pin configuration with three pins: gate (G), drain (D), and source (S).
Functional Features
- Low on-resistance for minimal power dissipation
- Fast switching speed for efficient power management
- High voltage rating for versatile applications
Advantages and Disadvantages
- Advantages:
- High voltage rating allows for diverse application scenarios
- Low on-resistance minimizes power loss
- Fast switching speed enhances efficiency
- Disadvantages:
- Relatively high gate charge compared to some alternatives
- May require additional heat sinking for high-power applications
Working Principles
The IPW60R180C7XKSA1 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the flow of current between the drain and source terminals.
Detailed Application Field Plans
This MOSFET is suitable for a wide range of power switching applications, including but not limited to:
- Switch mode power supplies
- Motor control
- Inverters
- DC-DC converters
- Solar inverters
Detailed and Complete Alternative Models
- Alternative Model 1: IPW60R190C6
- Voltage Rating: 600V
- Current Rating: 60A
- On-Resistance: 0.19Ω
- Alternative Model 2: IPW60R160C7
- Voltage Rating: 600V
- Current Rating: 60A
- On-Resistance: 0.16Ω
Note: The above information is subject to change based on product updates and revisions.
This comprehensive entry provides a detailed overview of the IPW60R180C7XKSA1, covering its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.