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IPD60R2K1CEAUMA1
Product Overview
Category
The IPD60R2K1CEAUMA1 belongs to the category of power MOSFETs.
Use
It is used for high-voltage applications in various electronic devices and systems.
Characteristics
- High voltage capability
- Low input capacitance
- Fast switching speed
- Low on-resistance
Package
The IPD60R2K1CEAUMA1 is typically available in a TO-252 package.
Essence
This MOSFET is designed to provide efficient power management and control in electronic circuits.
Packaging/Quantity
It is commonly packaged in reels with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 600V
- Continuous Drain Current (ID): 4.3A
- On-Resistance (RDS(on)): 2.1Ω
- Input Capacitance (Ciss): 1100pF
- Power Dissipation (PD): 48W
Detailed Pin Configuration
The IPD60R2K1CEAUMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various power applications.
- Low input capacitance enables fast switching speeds.
- Low on-resistance minimizes power loss and heat generation.
Advantages and Disadvantages
Advantages
- Efficient power management
- Fast switching speed
- Low power dissipation
Disadvantages
- Higher cost compared to standard MOSFETs
- Sensitive to static electricity
Working Principles
The IPD60R2K1CEAUMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPD60R2K1CEAUMA1 is suitable for a wide range of applications including: - Switching power supplies - Motor control - LED lighting - Solar inverters - Industrial automation
Detailed and Complete Alternative Models
Some alternative models to the IPD60R2K1CEAUMA1 include: - IPD60R2K1C5 - Similar specifications and characteristics - IPD60R2K1CE - Lower input capacitance, higher cost - IPD60R2K1C3 - Lower on-resistance, higher price point
In conclusion, the IPD60R2K1CEAUMA1 is a high-voltage power MOSFET with fast switching speeds and low on-resistance, making it suitable for various power management applications in electronics.
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Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng IPD60R2K1CEAUMA1 trong giải pháp kỹ thuật
What is the maximum drain current of IPD60R2K1CEAUMA1?
- The maximum drain current of IPD60R2K1CEAUMA1 is 60A.
What is the voltage rating of IPD60R2K1CEAUMA1?
- IPD60R2K1CEAUMA1 has a voltage rating of 600V.
What type of package does IPD60R2K1CEAUMA1 come in?
- IPD60R2K1CEAUMA1 comes in a TO-252-3 package.
What is the on-resistance of IPD60R2K1CEAUMA1?
- The on-resistance of IPD60R2K1CEAUMA1 is typically 0.0021 ohms.
Is IPD60R2K1CEAUMA1 suitable for high-frequency applications?
- Yes, IPD60R2K1CEAUMA1 is suitable for high-frequency applications due to its low on-resistance and fast switching characteristics.
What is the typical gate charge of IPD60R2K1CEAUMA1?
- The typical gate charge of IPD60R2K1CEAUMA1 is 40nC.
Can IPD60R2K1CEAUMA1 be used in automotive applications?
- Yes, IPD60R2K1CEAUMA1 is designed for automotive applications and meets the necessary quality and reliability standards.
Does IPD60R2K1CEAUMA1 have built-in protection features?
- IPD60R2K1CEAUMA1 includes built-in protection features such as overcurrent protection and thermal shutdown.
What is the operating temperature range of IPD60R2K1CEAUMA1?
- IPD60R2K1CEAUMA1 has an operating temperature range of -55°C to 150°C.
Is IPD60R2K1CEAUMA1 RoHS compliant?
- Yes, IPD60R2K1CEAUMA1 is RoHS compliant, making it suitable for environmentally friendly designs.