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IPD50R800CEBTMA1
Product Overview
Category
The IPD50R800CEBTMA1 belongs to the category of power MOSFETs.
Use
It is used as a power semiconductor device for switching and amplifying electronic signals in various applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
- Avalanche energy specified
Package
The IPD50R800CEBTMA1 is typically available in a TO-252-3 (DPAK) package.
Essence
This MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is commonly packaged in reels with a quantity of 2500 units per reel.
Specifications
- Drain-Source Voltage (VDS): 800V
- Continuous Drain Current (ID): 5.6A
- On-Resistance (RDS(on)): 0.45Ω
- Total Gate Charge (Qg): 20nC
- Avalanche Energy (Eas): 160mJ
Detailed Pin Configuration
The IPD50R800CEBTMA1 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various power applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid response in switching applications.
Advantages and Disadvantages
Advantages
- High voltage capability suitable for diverse applications
- Low on-resistance for reduced power dissipation
- Fast switching speed for improved performance
Disadvantages
- Higher cost compared to lower voltage MOSFETs
- More complex drive circuitry required due to high voltage rating
Working Principles
The IPD50R800CEBTMA1 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.
Detailed Application Field Plans
The IPD50R800CEBTMA1 is commonly used in: - Switching power supplies - Motor control - Inverters - LED lighting - Audio amplifiers
Detailed and Complete Alternative Models
Some alternative models to the IPD50R800CEBTMA1 include: - IPD50R800CPXKSA1 - IPD50R800CPXKSA2 - IPD50R800CPXKSA3
In conclusion, the IPD50R800CEBTMA1 is a high-voltage power MOSFET with excellent characteristics for various power applications, making it a versatile choice for efficient power management and control.
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Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng IPD50R800CEBTMA1 trong giải pháp kỹ thuật
What is the maximum drain current of IPD50R800CEBTMA1?
- The maximum drain current of IPD50R800CEBTMA1 is 50A.
What is the typical on-state resistance of IPD50R800CEBTMA1?
- The typical on-state resistance of IPD50R800CEBTMA1 is 0.8 ohms.
What is the gate-source voltage of IPD50R800CEBTMA1?
- The gate-source voltage of IPD50R800CEBTMA1 is ±20V.
What is the maximum power dissipation of IPD50R800CEBTMA1?
- The maximum power dissipation of IPD50R800CEBTMA1 is 300W.
What are the typical applications for IPD50R800CEBTMA1?
- IPD50R800CEBTMA1 is commonly used in motor control, power supplies, and DC-DC converters.
What is the operating temperature range of IPD50R800CEBTMA1?
- The operating temperature range of IPD50R800CEBTMA1 is -55°C to 150°C.
Does IPD50R800CEBTMA1 have built-in protection features?
- Yes, IPD50R800CEBTMA1 has built-in overcurrent protection and thermal shutdown features.
What is the input capacitance of IPD50R800CEBTMA1?
- The input capacitance of IPD50R800CEBTMA1 is typically 3700pF.
Is IPD50R800CEBTMA1 RoHS compliant?
- Yes, IPD50R800CEBTMA1 is RoHS compliant.
What package type does IPD50R800CEBTMA1 come in?
- IPD50R800CEBTMA1 is available in a TO-252-3 package.