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IPD50R800CEATMA1
Product Overview
Category
The IPD50R800CEATMA1 belongs to the category of power MOSFETs.
Use
It is used as a high-voltage switching device in various electronic circuits and applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The IPD50R800CEATMA1 is typically available in a TO-252 package.
Essence
This MOSFET is essential for efficient power management and control in electronic devices and systems.
Packaging/Quantity
It is commonly packaged in reels with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 800V
- Continuous Drain Current (ID): 5A
- On-Resistance (RDS(on)): 0.8Ω
- Gate-Source Voltage (VGS): ±30V
- Total Gate Charge (Qg): 18nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The IPD50R800CEATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various power applications.
- Low on-resistance minimizes power losses and improves efficiency.
- Fast switching speed enables rapid response in switching applications.
Advantages and Disadvantages
Advantages
- High voltage capability suitable for diverse applications
- Low on-resistance for improved efficiency
- Fast switching speed for responsive performance
Disadvantages
- May require careful handling due to high voltage capabilities
- Sensitivity to static electricity
Working Principles
The IPD50R800CEATMA1 operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPD50R800CEATMA1 is commonly used in the following applications: - Switching power supplies - Motor control - Inverters - LED lighting - Audio amplifiers
Detailed and Complete Alternative Models
Some alternative models to the IPD50R800CEATMA1 include: - IPD50N06S4-08 - IPD50N06S3L-26 - IPD50N06S4L-26
In conclusion, the IPD50R800CEATMA1 is a high-voltage power MOSFET with characteristics that make it suitable for a wide range of power management applications. Its high voltage capability, low on-resistance, and fast switching speed contribute to its effectiveness in various electronic circuits and systems.
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Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng IPD50R800CEATMA1 trong giải pháp kỹ thuật
What is the maximum drain current of IPD50R800CEATMA1?
- The maximum drain current of IPD50R800CEATMA1 is 50A.
What is the maximum voltage rating of IPD50R800CEATMA1?
- The maximum voltage rating of IPD50R800CEATMA1 is 800V.
What type of package does IPD50R800CEATMA1 come in?
- IPD50R800CEATMA1 comes in a TO-252-3 package.
What is the on-resistance of IPD50R800CEATMA1?
- The on-resistance of IPD50R800CEATMA1 is typically 80mΩ.
Is IPD50R800CEATMA1 suitable for high-frequency applications?
- Yes, IPD50R800CEATMA1 is suitable for high-frequency applications due to its low gate charge and capacitances.
What is the recommended operating temperature range for IPD50R800CEATMA1?
- The recommended operating temperature range for IPD50R800CEATMA1 is -55°C to 150°C.
Does IPD50R800CEATMA1 have built-in protection features?
- Yes, IPD50R800CEATMA1 has built-in overcurrent and overtemperature protection.
Can IPD50R800CEATMA1 be used in automotive applications?
- Yes, IPD50R800CEATMA1 is suitable for automotive applications, including motor control and power distribution.
What are the typical applications for IPD50R800CEATMA1?
- Typical applications for IPD50R800CEATMA1 include motor drives, inverters, and DC-DC converters.
Is IPD50R800CEATMA1 RoHS compliant?
- Yes, IPD50R800CEATMA1 is RoHS compliant, making it suitable for use in environmentally sensitive applications.