IPD26N06S2L35ATMA2

Product Overview

• Category: Power MOSFET
• Use: Power switching applications
• Characteristics: High voltage, low on-resistance, fast switching speed
• Package: TO-252-3 (DPAK)
• Essence: N-channel enhancement mode power transistor
• Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

• Voltage Rating: 60V
• Current Rating: 26A
• On-Resistance: 35mΩ
• Gate Threshold Voltage: 2V
• Package Type: DPAK (TO-252-3)

Detailed Pin Configuration

The IPD26N06S2L35ATMA2 has a standard DPAK (TO-252-3) package with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low on-resistance for efficient power switching
• Fast switching speed for improved performance
• Enhanced thermal performance for reliability

Advantages and Disadvantages

Advantages

• High voltage rating
• Low on-resistance
• Fast switching speed
• Reliable thermal performance

Disadvantages

• Sensitive to static electricity
• Requires careful handling during installation

Working Principles

The IPD26N06S2L35ATMA2 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the channel.

Detailed Application Field Plans

The IPD26N06S2L35ATMA2 is suitable for various power switching applications, including: - Motor control systems - Power supplies - Inverters - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the IPD26N06S2L35ATMA2 include: - IPD26N06S4L35ATMA2 - IPD26N06S2L30ATMA2 - IPD26N06S2L40ATMA2 - IPD26N06S2L35BTMA2

This concludes the entry for IPD26N06S2L35ATMA2, covering its basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

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