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IPBH6N03LA G
Product Overview
- Category: Power MOSFET
- Use: Power switching applications
- Characteristics: High voltage, low on-resistance, fast switching speed
- Package: TO-263-3
- Essence: Efficient power management
- Packaging/Quantity: Tape & Reel, 2500 units per reel
Specifications
- Voltage Rating: 30V
- Current Rating: 60A
- On-Resistance: 6mΩ
- Gate Charge: 28nC
- Operating Temperature: -55°C to 175°C
Detailed Pin Configuration
The IPBH6N03LA G features a standard TO-263-3 pin configuration with the following pinout: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low on-resistance for minimal power dissipation
- Fast switching speed for efficient power management
- High voltage rating for versatile applications
Advantages and Disadvantages
Advantages: - High voltage rating allows for diverse application scenarios - Low on-resistance ensures minimal power loss - Fast switching speed enhances efficiency
Disadvantages: - Sensitive to static electricity - Requires careful handling during assembly
Working Principles
The IPBH6N03LA G operates based on the principles of field-effect transistors, utilizing its gate, drain, and source terminals to control the flow of current in power switching applications.
Detailed Application Field Plans
This power MOSFET is suitable for a wide range of applications including: - Switching power supplies - Motor control - LED lighting - Battery management systems - DC-DC converters
Detailed and Complete Alternative Models
- IPBH6N03LA G (TO-263-3 package)
- IPBH6N03LA G (D2PAK package)
- IPBH6N03LA G (TO-220AB package)
Note: The alternative models may vary in package type and pin configuration.
This comprehensive entry provides an in-depth understanding of the IPBH6N03LA G, covering its specifications, features, applications, and alternatives, making it a valuable resource for engineers and enthusiasts in the field of power electronics.
Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng IPBH6N03LA G trong giải pháp kỹ thuật
What is IPBH6N03LA G?
- IPBH6N03LA G is a power MOSFET transistor designed for use in various electronic applications, including power supplies, motor control, and lighting.
What are the key specifications of IPBH6N03LA G?
- The key specifications include a maximum drain-source voltage of 30V, continuous drain current of 60A, and low on-resistance.
In what applications can IPBH6N03LA G be used?
- IPBH6N03LA G can be used in applications such as DC-DC converters, battery management systems, and LED lighting.
What are the thermal characteristics of IPBH6N03LA G?
- The thermal resistance from junction to ambient is typically low, making it suitable for high-power applications.
Does IPBH6N03LA G require any special driving circuitry?
- It is recommended to use proper gate driving techniques to ensure efficient and reliable operation of IPBH6N03LA G.
What are the protection features of IPBH6N03LA G?
- IPBH6N03LA G may include built-in protection against overcurrent, overtemperature, and short-circuit conditions.
Can IPBH6N03LA G be used in automotive applications?
- Yes, IPBH6N03LA G is suitable for automotive applications such as motor control and power distribution.
Are there any application notes or reference designs available for IPBH6N03LA G?
- Yes, application notes and reference designs are often provided by the manufacturer to assist with the implementation of IPBH6N03LA G in various technical solutions.
What are the typical operating conditions for IPBH6N03LA G?
- IPBH6N03LA G operates within a specified temperature range and requires appropriate voltage and current levels for optimal performance.
Where can I find the detailed datasheet for IPBH6N03LA G?
- The detailed datasheet for IPBH6N03LA G can be found on the manufacturer's website or through authorized distributors.