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IPB100N08S2L07ATMA1
Product Overview
Category
The IPB100N08S2L07ATMA1 belongs to the category of power MOSFETs.
Use
It is used for high-power switching applications in various electronic devices and systems.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The IPB100N08S2L07ATMA1 is typically available in a TO-263-3 package.
Essence
This MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is commonly packaged in reels with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 80V
- Continuous Drain Current (ID): 100A
- On-Resistance (RDS(on)): 8mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 60nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPB100N08S2L07ATMA1 has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- High current-carrying capability
- Low conduction losses
- Fast switching characteristics
- Enhanced thermal performance
Advantages and Disadvantages
Advantages
- High power handling capacity
- Low on-resistance for reduced power dissipation
- Suitable for high-frequency switching applications
Disadvantages
- Sensitive to static electricity and voltage spikes
- Requires careful handling and protection during circuit assembly
Working Principles
The IPB100N08S2L07ATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPB100N08S2L07ATMA1 is widely used in: - Switch-mode power supplies - Motor control systems - Automotive electronics - Industrial automation equipment - Renewable energy systems
Detailed and Complete Alternative Models
Some alternative models to the IPB100N08S2L07ATMA1 include: - IRF1010E - FDP8870 - STP80NF03L
In conclusion, the IPB100N08S2L07ATMA1 power MOSFET offers high-performance characteristics suitable for a wide range of power management applications, making it an essential component in modern electronic systems.
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Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng IPB100N08S2L07ATMA1 trong giải pháp kỹ thuật
What is the maximum drain-source voltage of IPB100N08S2L07ATMA1?
- The maximum drain-source voltage of IPB100N08S2L07ATMA1 is 80V.
What is the continuous drain current rating of IPB100N08S2L07ATMA1?
- The continuous drain current rating of IPB100N08S2L07ATMA1 is 100A.
What is the on-resistance of IPB100N08S2L07ATMA1?
- The on-resistance of IPB100N08S2L07ATMA1 is typically 8mΩ at Vgs = 10V.
Can IPB100N08S2L07ATMA1 be used in automotive applications?
- Yes, IPB100N08S2L07ATMA1 is designed for use in automotive applications.
What is the operating temperature range of IPB100N08S2L07ATMA1?
- The operating temperature range of IPB100N08S2L07ATMA1 is -55°C to 175°C.
Does IPB100N08S2L07ATMA1 have built-in ESD protection?
- Yes, IPB100N08S2L07ATMA1 features built-in ESD protection.
What is the gate threshold voltage of IPB100N08S2L07ATMA1?
- The gate threshold voltage of IPB100N08S2L07ATMA1 is typically 2.5V.
Is IPB100N08S2L07ATMA1 suitable for high-frequency switching applications?
- Yes, IPB100N08S2L07ATMA1 is suitable for high-frequency switching applications.
What package type does IPB100N08S2L07ATMA1 come in?
- IPB100N08S2L07ATMA1 is available in a TO-263-7 package.
Are there any application notes or reference designs available for using IPB100N08S2L07ATMA1?
- Yes, Infineon provides application notes and reference designs for using IPB100N08S2L07ATMA1 in various technical solutions.