IPB072N15N3GATMA1

Introduction

The IPB072N15N3GATMA1 is a power MOSFET belonging to the category of electronic components. This device is commonly used in various applications due to its specific characteristics and functional features. In this entry, we will provide an overview of the product, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Power MOSFET
• Use: The IPB072N15N3GATMA1 is used as a switching device in power electronics applications.
• Characteristics: This MOSFET offers low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: The device is typically available in a TO-263 package.
• Essence: The essence of the IPB072N15N3GATMA1 lies in its ability to efficiently control and switch high-power loads.
• Packaging/Quantity: It is commonly supplied in reels or tubes containing multiple units.

Specifications

• Voltage Rating: 150V
• Current Rating: 72A
• On-State Resistance: 4.7 mΩ
• Gate Charge: 60nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB072N15N3GATMA1 typically has three pins: gate, drain, and source. The pinout configuration is as follows: - Gate (G) - Pin 1 - Drain (D) - Pin 2 - Source (S) - Pin 3

Functional Features

• Low On-State Resistance: Enables efficient power conduction with minimal voltage drop.
• High Switching Speed: Facilitates rapid switching transitions, reducing power loss during operation.
• Low Gate Charge: Allows for quick and precise control of the MOSFET.

Advantages and Disadvantages

Advantages

• High efficiency in power conversion applications
• Fast switching capabilities
• Low power dissipation

Disadvantages

• Sensitivity to voltage spikes
• Potential for thermal issues at high currents

Working Principles

The IPB072N15N3GATMA1 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can effectively switch high-power loads on and off.

Detailed Application Field Plans

The IPB072N15N3GATMA1 finds extensive use in various applications, including: - Switch-mode power supplies - Motor control systems - Solar inverters - Electric vehicle powertrains

Detailed and Complete Alternative Models

Some alternative models to the IPB072N15N3GATMA1 include: - Infineon IPP072N15N3 G - ON Semiconductor NTMFS4C028N - STMicroelectronics STL75N15F7

In conclusion, the IPB072N15N3GATMA1 is a versatile power MOSFET with specific characteristics that make it well-suited for high-power switching applications. Its low on-state resistance, high switching speed, and low gate charge contribute to its widespread use in power electronics. Understanding its specifications, pin configuration, functional features, and application field plans is essential for effectively integrating this component into various electronic designs. Additionally, awareness of alternative models provides flexibility in component selection based on specific design requirements.

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