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IPB042N03LGATMA1
Introduction
The IPB042N03LGATMA1 is a power MOSFET belonging to the category of electronic components. It is widely used in various applications due to its unique characteristics and performance.
Basic Information Overview
- Category: Power MOSFET
- Use: Switching and amplification in electronic circuits
- Characteristics: High current capability, low on-resistance, fast switching speed
- Package: TO-263-3 (D2PAK)
- Essence: Efficient power management
- Packaging/Quantity: Typically packaged in reels or tubes, quantity varies based on supplier
Specifications
- Voltage Rating: 30V
- Current Rating: 100A
- On-Resistance: 4.2mΩ
- Gate Charge: 35nC
- Operating Temperature: -55°C to 175°C
- Datasheet: IPB042N03LGATMA1 Datasheet
Detailed Pin Configuration
The IPB042N03LGATMA1 typically has three pins: 1. Gate (G): Input for controlling the MOSFET 2. Drain (D): Output terminal for the load 3. Source (S): Common terminal
Functional Features
- Low on-resistance for minimal power dissipation
- Fast switching speed for efficient operation
- High current capability for demanding applications
Advantages and Disadvantages
Advantages: - High current handling capacity - Low on-resistance leading to reduced power loss - Fast switching speed for improved efficiency
Disadvantages: - Sensitivity to static electricity - Gate drive requirements may be more stringent compared to other MOSFETs
Working Principles
The IPB042N03LGATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a voltage is applied to the gate terminal, it controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPB042N03LGATMA1 finds extensive use in various applications including: - Switched-mode power supplies - Motor control - Battery management systems - LED lighting - Automotive electronics
Detailed and Complete Alternative Models
Some alternative models to the IPB042N03LGATMA1 include: - IRF3709ZPBF - FDP8878 - AUIRF3710S
In conclusion, the IPB042N03LGATMA1 is a versatile power MOSFET with high current capability, low on-resistance, and fast switching speed, making it suitable for a wide range of electronic applications.
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Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng IPB042N03LGATMA1 trong giải pháp kỹ thuật
What is the maximum drain-source voltage of IPB042N03LGATMA1?
- The maximum drain-source voltage of IPB042N03LGATMA1 is 30V.
What is the continuous drain current rating of IPB042N03LGATMA1?
- The continuous drain current rating of IPB042N03LGATMA1 is 80A.
What is the on-state resistance (RDS(on)) of IPB042N03LGATMA1?
- The on-state resistance (RDS(on)) of IPB042N03LGATMA1 is typically 4.2mΩ at VGS = 10V.
What is the gate threshold voltage of IPB042N03LGATMA1?
- The gate threshold voltage of IPB042N03LGATMA1 is typically 2V.
What are the recommended operating temperature range for IPB042N03LGATMA1?
- The recommended operating temperature range for IPB042N03LGATMA1 is -55°C to 175°C.
Is IPB042N03LGATMA1 suitable for automotive applications?
- Yes, IPB042N03LGATMA1 is designed for automotive applications and meets AEC-Q101 standards.
Does IPB042N03LGATMA1 have built-in ESD protection?
- Yes, IPB042N03LGATMA1 features built-in ESD protection.
What package type does IPB042N03LGATMA1 come in?
- IPB042N03LGATMA1 is available in a TO-263-7 package.
Can IPB042N03LGATMA1 be used in high-frequency switching applications?
- Yes, IPB042N03LGATMA1 is suitable for high-frequency switching applications.
Are there any application notes or reference designs available for using IPB042N03LGATMA1 in technical solutions?
- Yes, Infineon provides application notes and reference designs for using IPB042N03LGATMA1 in various technical solutions.