70V7519S166DRI Product Overview

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Power Management
• Characteristics: High voltage, high current capability
• Package: Surface Mount
• Essence: Power MOSFET
• Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

• Voltage Rating: 70V
• Current Rating: 75A
• Technology: Silicon Carbide (SiC)
• Operating Temperature: -55°C to 175°C
• Gate Charge: 166nC
• RDS(ON): <10mΩ

Detailed Pin Configuration

The 70V7519S166DRI features a standard 8-pin surface mount package with the following pin configuration: 1. Gate 2. Source 3. Drain 4. N/C 5. N/C 6. Source 7. Drain 8. Gate

Functional Features

• High voltage and current handling capability
• Low on-resistance for efficient power management
• Fast switching speed for improved performance
• Enhanced thermal characteristics for reliability

Advantages and Disadvantages

Advantages

• Superior power handling capabilities
• Efficient power management
• Fast switching speed
• Enhanced thermal performance

Disadvantages

• Higher cost compared to traditional MOSFETs
• Sensitive to electrostatic discharge (ESD)

Working Principles

The 70V7519S166DRI operates based on the principles of field-effect transistors, utilizing its silicon carbide technology to efficiently control power flow in various applications.

Detailed Application Field Plans

This power MOSFET is ideally suited for use in: - Switched-mode power supplies - Motor drives - Electric vehicles - Renewable energy systems

Detailed and Complete Alternative Models

• 70V7519S166DR: Similar specifications without SiC technology
• 60V6512S150DRI: Lower voltage rating with similar current handling capability
• 80V8020S180DRI: Higher voltage rating with enhanced thermal performance

In conclusion, the 70V7519S166DRI is a high-performance power MOSFET designed for demanding power management applications, offering superior voltage and current handling capabilities, fast switching speed, and enhanced thermal characteristics.

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