S29WS128P0SBFW000

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
• Package: Small outline BGA (Ball Grid Array)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Available in reels, quantity depends on customer requirements

Specifications

• Memory Type: NOR Flash
• Capacity: 128 Megabits (16 Megabytes)
• Organization: 16 M x 8 bits
• Voltage Range: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns (max)
• Erase/Program Suspend/Erase Suspend: Yes
• Burst Mode: Yes
• Security Features: Password protection, lock/unlock functionality

Detailed Pin Configuration

The S29WS128P0SBFW000 has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. CE#
19. WE#
20. OE#
21. BYTE#
22. RY/BY#
23. RESET#
24. NC
25. DQ0
26. DQ1
27. DQ2
28. DQ3
29. DQ4
30. DQ5
31. DQ6
32. DQ7
33. VSSQ
34. VCCQ
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• High-speed read and write operations for quick data access
• Erase and program suspend functionality for flexible operation
• Burst mode support for efficient data transfer
• Password protection and lock/unlock functionality for enhanced security
• Reliable performance in a wide range of operating temperatures

Advantages

• Large storage capacity allows for storing a significant amount of data
• High-speed operations enable fast data retrieval and storage
• Non-volatile memory ensures data retention even when power is lost
• Security features provide protection against unauthorized access
• Compact package size saves space in electronic devices

Disadvantages

• Limited compatibility with certain interfaces due to parallel interface design
• Higher power consumption compared to some other memory technologies
• Relatively higher cost per unit compared to lower capacity flash memory options

Working Principles

The S29WS128P0SBFW000 utilizes NOR flash memory technology. It stores data by trapping electrons in floating gate transistors, which can retain the charge even when the power is turned off. The stored data can be accessed by sending specific commands and addresses through the parallel interface.

Detailed Application Field Plans

The S29WS128P0SBFW000 is commonly used in various electronic devices that require reliable and high-capacity data storage. Some application fields include: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive systems (e.g., infotainment systems, navigation systems) - Industrial equipment (e.g., control systems, data loggers) - Networking devices (e.g., routers, switches)

Detailed and Complete Alternative Models

• S29WS064P0SBFW000: 64 Megabit (8 Megabyte) capacity, same specifications as S29WS128P0SBFW000
• S29WS256P0SBFW000: 256 Megabit (32 Megabyte) capacity, same specifications as S29WS128P0SBFW000
• S29WS512P0SBFW000: 512 Megabit (64 Megabyte) capacity, same specifications as S29WS128P0SBFW000

(Note: The above alternative models are for illustrative purposes only and may not represent the complete range of available alternatives.)

This entry provides an overview of the S29WS128P0SBFW000 flash memory product, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models. With its reliable performance and large storage capacity, the S29WS128P0SBFW000 is a versatile solution for data storage in various electronic devices.